NSGM75GB120 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

NSGM75GB120 Specs and Replacement

   Type Designator: NSGM75GB120
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 600 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 125 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   tr ⓘ - Rise Time, typ: 350 nS
   Coesⓘ - Output Capacitance, typ: 600 pF
   Package: MODULE

NSGM75GB120 Substitution

- IGBT ⓘ Cross-Reference Search

NSGM75GB120 datasheet

..1. Size:864K nell
nsgm75gb120.pdf pdf_icon

SEMICONDUCTOR 40+0.5 3-M5.0 23+0.5 23+0.5 E2 C1 C2E1 80+0.5 93+0.5 2- 6.3 17+0.5 17+0.5 17+0.5 2.8x0.5 10 10 10 All dimensions in millimeters 4+0.6 12+0.5 35+0.6 17.8+0.6 G1 E1 E2 G2 4+0.6 7.7+0.2 6.7+0.6 31+0.6 22+0.3 SEMICONDUCTOR Fig.1 Power dissipation , Ptot=f (Tc) Fig.2 Safe operating area , IC=f (VCE) Parameter Tj... See More ⇒

Specs: IRG7PSH54K10D , MMG100S060B6R , MMG75S170B6EN , MMG150HB060B6EN , MMG150S060B6R , MMG100HB120H6HN , MMG100D120B6TN , MMG75S120B6UN , XNF15N60T , MMG100S120B6HN , MMG200S060B6EN , MMG100S170B6EN , AUIRGP65G40D0 , MMG100S120B6C , MMG100S120B6UN , MMG100SR060B , MMG100SR060DE .