NSGM75GB120 Datasheet. Specs and Replacement

Type Designator: NSGM75GB120  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 600 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 125 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 350 nS

Coesⓘ - Output Capacitance, typ: 600 pF

Package: MODULE

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NSGM75GB120 datasheet

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NSGM75GB120

SEMICONDUCTOR 40+0.5 3-M5.0 23+0.5 23+0.5 E2 C1 C2E1 80+0.5 93+0.5 2- 6.3 17+0.5 17+0.5 17+0.5 2.8x0.5 10 10 10 All dimensions in millimeters 4+0.6 12+0.5 35+0.6 17.8+0.6 G1 E1 E2 G2 4+0.6 7.7+0.2 6.7+0.6 31+0.6 22+0.3 SEMICONDUCTOR Fig.1 Power dissipation , Ptot=f (Tc) Fig.2 Safe operating area , IC=f (VCE) Parameter Tj... See More ⇒

Specs: IRG7PSH54K10D, MMG100S060B6R, MMG75S170B6EN, MMG150HB060B6EN, MMG150S060B6R, MMG100HB120H6HN, MMG100D120B6TN, MMG75S120B6UN, GT60N321, MMG100S120B6HN, MMG200S060B6EN, MMG100S170B6EN, AUIRGP65G40D0, MMG100S120B6C, MMG100S120B6UN, MMG100SR060B, MMG100SR060DE

Keywords - NSGM75GB120 transistor spec

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