All IGBT. NSGM75GB120 Datasheet

 

NSGM75GB120 Datasheet and Replacement


   Type Designator: NSGM75GB120
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 600 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 125 ℃
   tr ⓘ - Rise Time, typ: 350 nS
   Coesⓘ - Output Capacitance, typ: 600 pF
   Package: MODULE
 

 NSGM75GB120 substitution

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NSGM75GB120 Datasheet (PDF)

 ..1. Size:864K  nell
 nsgm75gb120.pdf pdf_icon

NSGM75GB120

SEMICONDUCTOR40+0.5 3-M5.023+0.5 23+0.5E2 C1C2E180+0.593+0.52- 6.317+0.5 17+0.5 17+0.52.8x0.510 10 10All dimensions in millimeters4+0.612+0.535+0.617.8+0.6G1 E1E2 G24+0.67.7+0.26.7+0.631+0.622+0.3SEMICONDUCTORFig.1 Power dissipation , Ptot=f (Tc) Fig.2 Safe operating area , IC=f (VCE) Parameter:Tj

Datasheet: IRG7PSH54K10D , MMG100S060B6R , MMG75S170B6EN , MMG150HB060B6EN , MMG150S060B6R , MMG100HB120H6HN , MMG100D120B6TN , MMG75S120B6UN , RGT50TS65D , MMG100S120B6HN , MMG200S060B6EN , MMG100S170B6EN , AUIRGP65G40D0 , MMG100S120B6C , MMG100S120B6UN , MMG100SR060B , MMG100SR060DE .

History: MKI80-06T6K

Keywords - NSGM75GB120 transistor datasheet

 NSGM75GB120 cross reference
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