IGW100N60H3 PDF and Equivalents Search

 

IGW100N60H3 Specs and Replacement

Type Designator: IGW100N60H3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 714 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 140 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃

tr ⓘ - Rise Time, typ: 47 nS

Coesⓘ - Output Capacitance, typ: 210 pF

Package: TO247

 IGW100N60H3 Substitution

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IGW100N60H3 datasheet

 ..1. Size:2037K  infineon
 igw100n60h3.pdf pdf_icon

IGW100N60H3

IGBT High speed IGBT in Trench and Fieldstop technology IGW100N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IGW100N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low turn-off energy low V CEsat low EMI maximum jun... See More ⇒

Specs: MMG400D120B6TN , MMG400D120UA6TN , MMG400KR120U , MMG450WB120B6TN , MMG400KR060U , 50MT060WHTAPBF , FF200R06KE3 , IKQ100N60TA , FGPF4633 , MMG200S060B6N , IRGPS46160D , IRGPS66160D , MMG150D120B6TN , MMG150Q120B6TN , NSGM100GB120 , APT75GN120B2G , APT75GN120LG .

Keywords - IGW100N60H3 transistor spec

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