All IGBT. IGW100N60H3 Datasheet

 

IGW100N60H3 IGBT. Datasheet pdf. Equivalent


   Type Designator: IGW100N60H3
   Type: IGBT
   Marking Code: G100H603
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 714 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 140 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 47 nS
   Coesⓘ - Output Capacitance, typ: 210 pF
   Qgⓘ - Total Gate Charge, typ: 625 nC
   Package: TO247

 IGW100N60H3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IGW100N60H3 Datasheet (PDF)

 ..1. Size:2037K  infineon
 igw100n60h3.pdf

IGW100N60H3 IGW100N60H3

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW100N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGW100N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low turn-off energy low V CEsat low EMI maximum jun

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