All IGBT. IGW100N60H3 Datasheet

 

IGW100N60H3 Datasheet and Replacement


   Type Designator: IGW100N60H3
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 714 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 140 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 47 nS
   Coesⓘ - Output Capacitance, typ: 210 pF
   Package: TO247
 

 IGW100N60H3 substitution

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IGW100N60H3 Datasheet (PDF)

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IGW100N60H3

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW100N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGW100N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low turn-off energy low V CEsat low EMI maximum jun

Datasheet: MMG400D120B6TN , MMG400D120UA6TN , MMG400KR120U , MMG450WB120B6TN , MMG400KR060U , 50MT060WHTAPBF , FF200R06KE3 , IKQ100N60TA , CRG15T120BNR3S , MMG200S060B6N , IRGPS46160D , IRGPS66160D , MMG150D120B6TN , MMG150Q120B6TN , NSGM100GB120 , APT75GN120B2G , APT75GN120LG .

History: MPMD150B120RH | CM200DU-24NFH | GT30J122A | APTGF150DH120 | CM1800DY-34S | MWI75-12A8 | RGS80TSX2DHR

Keywords - IGW100N60H3 transistor datasheet

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