All IGBT. IGW100N60H3 Datasheet

 

IGW100N60H3 Datasheet and Replacement


   Type Designator: IGW100N60H3
   Type: IGBT
   Marking Code: G100H603
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 714 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 140 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 47 nS
   Coesⓘ - Output Capacitance, typ: 210 pF
   Qgⓘ - Total Gate Charge, typ: 625 nC
   Package: TO247
      - IGBT Cross-Reference

 

IGW100N60H3 Datasheet (PDF)

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IGW100N60H3

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW100N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGW100N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low turn-off energy low V CEsat low EMI maximum jun

Datasheet: MMG400D120B6TN , MMG400D120UA6TN , MMG400KR120U , MMG450WB120B6TN , MMG400KR060U , 50MT060WHTAPBF , FF200R06KE3 , IKQ100N60TA , TGAN60N60F2DS , MMG200S060B6N , IRGPS46160D , IRGPS66160D , MMG150D120B6TN , MMG150Q120B6TN , NSGM100GB120 , APT75GN120B2G , APT75GN120LG .

History: DIM2400ESM17-A | DIM2400ESS12-A | DGW20N65CTL | STGWA40H120DF2 | IGC10T65QE | IGC114T170S8RH | DIM1000ECM33-TS

Keywords - IGW100N60H3 transistor datasheet

 IGW100N60H3 cross reference
 IGW100N60H3 equivalent finder
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