All IGBT. NSGM100GB120 Datasheet

 

NSGM100GB120 Datasheet and Replacement


   Type Designator: NSGM100GB120
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 800 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 350 nS
   Coesⓘ - Output Capacitance, typ: 800 pF
   Qgⓘ - Total Gate Charge, typ: 1050 nC
   Package: MODULE
      - IGBT Cross-Reference

 

NSGM100GB120 Datasheet (PDF)

 ..1. Size:350K  nell
 nsgm100gb120.pdf pdf_icon

NSGM100GB120

RoHS NSGM100GB Series RoHS SEMICONDUCTORIGBT Module (2 in one-package), 100A Features1. High frequency operation2. Low losses and soft switching3. Isolated baseplate for easy heat sinking 4. Discrete super-fast recovery free-wheel diode5. Small temperature dependence of the turn-off switching loss40+0.5 3-M5.0 Typical Applications23+0.5 23+0.5AC Motor ControlDC Motor

 9.1. Size:1403K  nell
 nsgm150gb120b.pdf pdf_icon

NSGM100GB120

SEMICONDUCTOR48.525 25C2E1 E2 C13-M693+0.3 4- 6.5108+0.514 14 14 2.84-0.5All dimensions in millimeters271517.848+0.362.5+0.5G1 E1E2 G230.930.522.5SEMICONDUCTORRoHS RoHS SEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTOR

Datasheet: FF200R06KE3 , IKQ100N60TA , IGW100N60H3 , MMG200S060B6N , IRGPS46160D , IRGPS66160D , MMG150D120B6TN , MMG150Q120B6TN , NGD8201N , APT75GN120B2G , APT75GN120LG , IKQ120N60TA , KM435A , MMG100DR120B , MMG300Q060B6R , SKM200GAH123DKL , FF150R17ME3G .

History: IXGP12N100A | IXGH40N30BD1

Keywords - NSGM100GB120 transistor datasheet

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 NSGM100GB120 equivalent finder
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