NSGM200GB120B Datasheet and Replacement
Type Designator: NSGM200GB120B
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 1400 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 60 nS
Coesⓘ - Output Capacitance, typ: 1600 pF
Package: MODULE
NSGM200GB120B substitution
NSGM200GB120B Datasheet (PDF)
nsgm200gb120b.pdf
SEMICONDUCTOR5. Small temperature dependence of the turn-off switching loss48.525 25C2E1 E2 C13-M693+0.3 4- 6.5108+0.514 14 14 2.84-0.5All dimensions in millimeters271517.848+0.362.5+0.5G1 E1E2 G230.930.522.5SEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTOR
Datasheet: IKQ120N60TA , KM435A , MMG100DR120B , MMG300Q060B6R , SKM200GAH123DKL , FF150R17ME3G , FF200R12KE3 , NSGM150GB120B , CRG75T60AK3HD , KM435B , T0360NB25A , MMG300DR120B , KM435V , NSGM300GB120B , MMG400D120B6HN , MMG450WB170B6EN , MMG400D170B6EN .
History: NGTG25N120FL2WG | BLG40T65FUK-F | IXGH30N120C3H1 | STGB14NC60KD | MIXA40WB1200TED | MKI50-06A7 | MMG150D120B6TN
Keywords - NSGM200GB120B transistor datasheet
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History: NGTG25N120FL2WG | BLG40T65FUK-F | IXGH30N120C3H1 | STGB14NC60KD | MIXA40WB1200TED | MKI50-06A7 | MMG150D120B6TN
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