NSGM200GB120B Datasheet and Replacement
Type Designator: NSGM200GB120B
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 1400 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 60 nS
Coesⓘ - Output Capacitance, typ: 1600 pF
Package: MODULE
NSGM200GB120B substitution
NSGM200GB120B Datasheet (PDF)
nsgm200gb120b.pdf
SEMICONDUCTOR5. Small temperature dependence of the turn-off switching loss48.525 25C2E1 E2 C13-M693+0.3 4- 6.5108+0.514 14 14 2.84-0.5All dimensions in millimeters271517.848+0.362.5+0.5G1 E1E2 G230.930.522.5SEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTOR
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: YGW25N120T1 | BLQG50T65FCKA-F
Keywords - NSGM200GB120B transistor datasheet
NSGM200GB120B cross reference
NSGM200GB120B equivalent finder
NSGM200GB120B lookup
NSGM200GB120B substitution
NSGM200GB120B replacement
History: YGW25N120T1 | BLQG50T65FCKA-F
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