T0360NB25A Datasheet and Replacement
Type Designator: T0360NB25A
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 1800 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 360 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tj ⓘ - Maximum Junction Temperature: 125 ℃
tr ⓘ - Rise Time, typ: 2000 nS
Package: MODULE
T0360NB25A substitution
T0360NB25A Datasheet (PDF)
t0360nb25a.pdf
Date:- 23 Aug, 2011 Data Sheet Issue:- P1 WESTCODEAn IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0360NB25A Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. 1250 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: 2MBI450U4N-120-50 | DIM800XSM45-TS | IXGX120N60C2 | F3L300R12MT4-B22 | MKI50-12F7 | MMG450WB120B6TC | IXGX50N60A2D1
Keywords - T0360NB25A transistor datasheet
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History: 2MBI450U4N-120-50 | DIM800XSM45-TS | IXGX120N60C2 | F3L300R12MT4-B22 | MKI50-12F7 | MMG450WB120B6TC | IXGX50N60A2D1
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