All IGBT. T0360NB25A Datasheet

 

T0360NB25A Datasheet and Replacement


   Type Designator: T0360NB25A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1800 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 360 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.3 V
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 2000 nS
   Qgⓘ - Total Gate Charge, typ: 3000 nC
   Package: MODULE
      - IGBT Cross-Reference

 

T0360NB25A Datasheet (PDF)

 ..1. Size:421K  ixys
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T0360NB25A

Date:- 23 Aug, 2011 Data Sheet Issue:- P1 WESTCODEAn IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0360NB25A Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. 1250 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS

Datasheet: MMG100DR120B , MMG300Q060B6R , SKM200GAH123DKL , FF150R17ME3G , FF200R12KE3 , NSGM150GB120B , NSGM200GB120B , KM435B , IHW40T60 , MMG300DR120B , KM435V , NSGM300GB120B , MMG400D120B6HN , MMG450WB170B6EN , MMG400D170B6EN , IGW30N65L5 , IKD06N60-RF .

History: DGW40N65CTH | IGC109T120T6RM | DIM1200FSM17-A | IGC50T120T6RL

Keywords - T0360NB25A transistor datasheet

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