T0360NB25A Datasheet and Replacement
Type Designator: T0360NB25A
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 1800 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 360 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tj ⓘ - Maximum Junction Temperature: 125 ℃
tr ⓘ - Rise Time, typ: 2000 nS
Package: MODULE
T0360NB25A substitution
T0360NB25A Datasheet (PDF)
t0360nb25a.pdf
Date:- 23 Aug, 2011 Data Sheet Issue:- P1 WESTCODEAn IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0360NB25A Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. 1250 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS
Datasheet: MMG100DR120B , MMG300Q060B6R , SKM200GAH123DKL , FF150R17ME3G , FF200R12KE3 , NSGM150GB120B , NSGM200GB120B , KM435B , TGPF30N43P , MMG300DR120B , KM435V , NSGM300GB120B , MMG400D120B6HN , MMG450WB170B6EN , MMG400D170B6EN , IGW30N65L5 , IKD06N60-RF .
History: IXGT28N120BD1
Keywords - T0360NB25A transistor datasheet
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History: IXGT28N120BD1
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