NSGM300GB120B Datasheet and Replacement
Type Designator: NSGM300GB120B
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 2100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 300 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 60 nS
Coesⓘ - Output Capacitance, typ: 2000 pF
Qgⓘ - Total Gate Charge, typ: 60 nC
Package: MODULE
NSGM300GB120B Datasheet (PDF)
nsgm300gb120b.pdf
RoHS NSGM300GB..B Series RoHS SEMICONDUCTORIGBT Module (2 in one-package), 300A Features1. High frequency operation2. Low losses and soft switching3. Isolated baseplate for easy heat sinking 4. Discrete super-fast recovery free-wheel diode5. Small temperature dependence of the turn-off switching loss Typical Applications48.5AC Motor Control25 25DC Motor ControlUPS
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: NCE40T120VT | FF225R17ME4_B11
Keywords - NSGM300GB120B transistor datasheet
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History: NCE40T120VT | FF225R17ME4_B11
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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