All IGBT. IQAB50N60D1 Datasheet

 

IQAB50N60D1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IQAB50N60D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 333 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 29 nS
   Coesⓘ - Output Capacitance, typ: 200 pF
   Qgⓘ - Total Gate Charge, typ: 310 nC
   Package: TO247

 IQAB50N60D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IQAB50N60D1 Datasheet (PDF)

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 iqab50n60d1.pdf

IQAB50N60D1 IQAB50N60D1

IQAB50N60D1 PRELIMINARY DATASHEET IGBT in Trench & Field Stop technology with soft, fast recovery anti-parallel diode, in TO247 Package Very high switching speed Very low V CE(sat) Short circuit withstand time 5us Designed for frequency converter and UPS Very tight parameter distribution High ruggedness, temperature stability Parallel switch

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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