All IGBT. IQAB50N60D1 Datasheet

 

IQAB50N60D1 Datasheet and Replacement


   Type Designator: IQAB50N60D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 333 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 29 nS
   Coesⓘ - Output Capacitance, typ: 200 pF
   Qg ⓘ - Total Gate Charge, typ: 310 nC
   Package: TO247
 

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IQAB50N60D1 Datasheet (PDF)

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IQAB50N60D1

IQAB50N60D1 PRELIMINARY DATASHEET IGBT in Trench & Field Stop technology with soft, fast recovery anti-parallel diode, in TO247 Package Very high switching speed Very low V CE(sat) Short circuit withstand time 5us Designed for frequency converter and UPS Very tight parameter distribution High ruggedness, temperature stability Parallel switch

Datasheet: NSGM300GB120B , MMG400D120B6HN , MMG450WB170B6EN , MMG400D170B6EN , IGW30N65L5 , IKD06N60-RF , IKD10N60RF , IKD15N60RF , GT30J122 , IQAB75N60A1 , IQAB75N60D1 , IQG1B150N120B4 , IQG1B228N120B4 , IQG1B300N120B4 , IQG1B456N120B4 , IQG1B600N120B4 , IQGB150N120GA4 .

History: STGP30H60DF | JT010N065FED | JT010N065SED | STGW30H60DFB | MPMC150B120RH

Keywords - IQAB50N60D1 transistor datasheet

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