IQS1B100N60L4 PDF and Equivalents Search

 

IQS1B100N60L4 Specs and Replacement

Type Designator: IQS1B100N60L4

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 335 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃

tr ⓘ - Rise Time, typ: 36 nS

Coesⓘ - Output Capacitance, typ: 384 pF

Package: MODULE

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IQS1B100N60L4 datasheet

 ..1. Size:124K  iqxprz
 iqs1b100n60l4.pdf pdf_icon

IQS1B100N60L4

IQS1B100N60L4 PRELIMINARY DATASHEET 13-18 Three Level Inverter Power Module T1 D1 Trench + Field Stop IGBT 20 19 Low voltage drop T2 D2 D5 Low tail current Very tight parameter distribution 22 21 High ruggedness, temperature stability 9-12 23-28 Very soft, fast recovery anti-parallel diode T3 D3 D6 29 Pb-free finished; RoHS compliant 32 ... See More ⇒

Specs: IQGB300N120I4 , IQGB300N60I4 , IQGB400N60I4 , IQIB100N60A3 , IQIB100N60D3 , IQIB150N60B3 , IQIB75N60A3 , IQIB75N60D3 , IRGP4063 , IQS2B57N120K4 , IQS2B75N120K4 , IXYN100N120B3H1 , IXYN100N120C3 , IXYN100N120C3H1 , IXYN100N65A3 , IXYN100N65B3D1 , IXYN100N65C3H1 .

History: IRG4BC15UD

Keywords - IQS1B100N60L4 transistor spec

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