All IGBT. IQS1B100N60L4 Datasheet

 

IQS1B100N60L4 Datasheet and Replacement


   Type Designator: IQS1B100N60L4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 335 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 384 pF
   Qg ⓘ - Total Gate Charge, typ: 1000 nC
   Package: MODULE
 

 IQS1B100N60L4 substitution

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IQS1B100N60L4 Datasheet (PDF)

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IQS1B100N60L4

IQS1B100N60L4 PRELIMINARY DATASHEET 13-18Three Level Inverter Power Module T1D1Trench + Field Stop IGBT 20 19 Low voltage drop T2D2D5 Low tail current Very tight parameter distribution 2221 High ruggedness, temperature stability 9-12 23-28 Very soft, fast recovery anti-parallel diode T3D3D6 29 Pb-free finished; RoHS compliant 32

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: 2MBI300TA-060 | NGTB30N65IHL2WG

Keywords - IQS1B100N60L4 transistor datasheet

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