All IGBT. IQS1B100N60L4 Datasheet

 

IQS1B100N60L4 Datasheet and Replacement


   Type Designator: IQS1B100N60L4
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 335 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 384 pF
   Package: MODULE
 

 IQS1B100N60L4 substitution

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IQS1B100N60L4 Datasheet (PDF)

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IQS1B100N60L4

IQS1B100N60L4 PRELIMINARY DATASHEET 13-18Three Level Inverter Power Module T1D1Trench + Field Stop IGBT 20 19 Low voltage drop T2D2D5 Low tail current Very tight parameter distribution 2221 High ruggedness, temperature stability 9-12 23-28 Very soft, fast recovery anti-parallel diode T3D3D6 29 Pb-free finished; RoHS compliant 32

Datasheet: IQGB300N120I4 , IQGB300N60I4 , IQGB400N60I4 , IQIB100N60A3 , IQIB100N60D3 , IQIB150N60B3 , IQIB75N60A3 , IQIB75N60D3 , BT60T60ANFK , IQS2B57N120K4 , IQS2B75N120K4 , IXYN100N120B3H1 , IXYN100N120C3 , IXYN100N120C3H1 , IXYN100N65A3 , IXYN100N65B3D1 , IXYN100N65C3H1 .

History: MMG600WB065TLA6EN | IGC04R60D

Keywords - IQS1B100N60L4 transistor datasheet

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