All IGBT. IXYN75N65C3D1 Datasheet

 

IXYN75N65C3D1 Datasheet and Replacement


   Type Designator: IXYN75N65C3D1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 600 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 65 nS
   Coesⓘ - Output Capacitance, typ: 330 pF
   Package: SOT227
      - IGBT Cross-Reference

 

IXYN75N65C3D1 Datasheet (PDF)

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IXYN75N65C3D1

Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYN75N65C3D1IC110 = 75AGenX3TM w/ Diode VCE(sat) 2.3V tfi(typ) = 60nsExtreme Light Punch throughIGBT for 20-60kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ = 25

Datasheet: IXYN100N120C3H1 , IXYN100N65A3 , IXYN100N65B3D1 , IXYN100N65C3H1 , IXYN120N120C3 , IXYN120N65B3D1 , IXYN120N65C3D1 , IXYN150N60B3 , SGT50T65FD1PT , IXYN80N90C3H1 , IXYN82N120C3 , IXBF10N300C , IXBF14N300 , IXBF15N300C , IXBF20N360 , IXBF22N300 , IXBF28N300 .

History: APT40GP60BG | IXGT20N120B

Keywords - IXYN75N65C3D1 transistor datasheet

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