IXBH10N300 Specs and Replacement
Type Designator: IXBH10N300
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 180 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
tr ⓘ - Rise Time, typ: 385 nS
Coesⓘ - Output Capacitance, typ: 40 pF
Package: TO247
IXBH10N300 Substitution - IGBT ⓘ Cross-Reference Search
IXBH10N300 datasheet
ixbh10n300.pdf
Advance Technical Information High Voltage, High Gain VCES = 3000V IXBH10N300 BIMOSFETTM Monolithic IC110 = 10A Bipolar MOS Transistor VCE(sat) 3.2V TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V G C Tab VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V E VGES Continuous 20 V G = Gate C = Collector VGEM Transient 30... See More ⇒
ixbh10n300hv.pdf
Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBA10N300HV BIMOSFETTM Monolithic IXBH10N300HV IC110 = 10A Bipolar MOS Transistor VCE(sat) 2.8V TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25 C to 150 C 3000 V TO-247HV (IXBH) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V ... See More ⇒
ixbh10n170.pdf
VCES = 1700 V High Voltage, High Gain IXBH 10N170 BIMOSFETTM Monolithic IC25 = 20 A IXBT 10N170 Bipolar MOS Transistor VCE(sat) = 3.8 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E (TAB) VGEM Transient 30 V IC25 TC = 25 C20 A TO-247 AD (IX... See More ⇒
ixbh10n170 ixbt10n170.pdf
VCES = 1700 V High Voltage, High Gain IXBH 10N170 BIMOSFETTM Monolithic IC25 = 20 A IXBT 10N170 Bipolar MOS Transistor VCE(sat) = 3.8 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E (TAB) VGEM Transient 30 V IC25 TC = 25 C20 A TO-247 AD (IX... See More ⇒
Specs: IXYN82N120C3, IXBF10N300C, IXBF14N300, IXBF15N300C, IXBF20N360, IXBF22N300, IXBF28N300, IXBF50N360, BT40T60ANF, IXBH10N300HV, IXBH14N300HV, IXBA10N300HV, IXBA12N300HV, IXBA14N300HV, IXBA16N170AHV, IXBH20N140, IXBH20N160
Keywords - IXBH10N300 transistor spec
IXBH10N300 cross reference
IXBH10N300 equivalent finder
IXBH10N300 lookup
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