IXBJ40N160 IGBT. Datasheet pdf. Equivalent

   Type Designator: IXBJ40N160
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 350 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 33 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 6.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 60 nS
   Coesⓘ - Output Capacitance, typ: 220 pF
   Qgⓘ - Total Gate Charge, typ: 130 nC
   Package: TO268

IXBJ40N160 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXBJ40N160 Datasheet (PDF)

..1. Size:60K ixys
ixbj40n160.pdf

High Voltage BIMOSFETTM IXBJ 40N140 VCES = 1400/1600 VMonolithic Bipolar IXBJ 40N160 IC25 = 33 AMOS Transistor VCE(sat) = 7.1 Vtfi = 40 nsN-Channel, Enhancement ModeCGESymbol Test Conditions Maximum Ratings40N140 40N160 TO-268VCES TJ = 25C to 150C 1400 1600 VGCVCGR TJ = 25C to 150C; RGE = 1 MW 1400 1600 VEC (TAB)VGES Continuous 20 VVGEM Transient 30

6.1. Size:62K ixys
ixbj40n140-160.pdf