All IGBT. IXBL20N300C Datasheet

 

IXBL20N300C Datasheet and Replacement


   Type Designator: IXBL20N300C
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 417 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 6 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 12 nS
   Coesⓘ - Output Capacitance, typ: 440 pF
   Package: I5PAK
 

 IXBL20N300C substitution

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IXBL20N300C Datasheet (PDF)

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IXBL20N300C

Advance Technical InformationHigh Voltage,VCES = 3000VIXBL20N300CHigh Frequency,IC110 = 20ABiMOSFETTM MonolithicVCE(sat) 6.0VBipolar MOS Transistor(Electrically Isolated Tab)ISOPLUS i5-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VGVCGR TJ = 25C to 150C, RGE = 1M 3000 V EC Isolated TabVGES Continuous

Datasheet: IXBH20N160 , IXBH20N360HV , IXBH22N300HV , IXBH40N140 , IXBH42N250 , IXBH42N300HV , IXBJ40N140 , IXBJ40N160 , GT45F122 , IXBL60N360 , IXBT12N300HV , IXBT16N170AHV , IXBT20N300HV , IXBT20N360HV , IXBT22N300HV , IXBT42N300HV , IXBV22N300S .

History: FD500R65KE3-K

Keywords - IXBL20N300C transistor datasheet

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