IXBL20N300C IGBT. Datasheet pdf. Equivalent
Type Designator: IXBL20N300C
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 417 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 6 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 12 nS
Coesⓘ - Output Capacitance, typ: 440 pF
Qgⓘ - Total Gate Charge, typ: 425 nC
Package: I5PAK
IXBL20N300C Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXBL20N300C Datasheet (PDF)
ixbl20n300c.pdf
Advance Technical InformationHigh Voltage,VCES = 3000VIXBL20N300CHigh Frequency,IC110 = 20ABiMOSFETTM MonolithicVCE(sat) 6.0VBipolar MOS Transistor(Electrically Isolated Tab)ISOPLUS i5-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VGVCGR TJ = 25C to 150C, RGE = 1M 3000 V EC Isolated TabVGES Continuous
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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