IXBL60N360 Specs and Replacement
Type Designator: IXBL60N360
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 417 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 92 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.4 V @25℃
tr ⓘ - Rise Time, typ: 300 nS
Coesⓘ - Output Capacitance, typ: 367 pF
Package: I5PAK IXBL60N360 Substitution - IGBT ⓘ Cross-Reference Search
IXBL60N360 datasheet
ixbl60n360.pdf
Advance Technical Information High Voltage, VCES = 3600V IXBL60N360 High Frequency, IC110 = 36A BiMOSFETTM Monolithic VCE(sat) 3.4V Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3600 V VCGR TJ = 25 C to 150 C, RGE = 1M 3600 V G E C VGES Continuous 20 V Isolated... See More ⇒
ixbl64n250.pdf
Advance Technical Information High Voltage, High Gain VCES = 2500V IXBL64N250 BiMOSFETTM IC110 = 46A VCE(sat) 3.0V Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 2500 V VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V G E Isolated Tab C VGES Continuous 25 V VGE... See More ⇒
Specs: IXBH20N360HV , IXBH22N300HV , IXBH40N140 , IXBH42N250 , IXBH42N300HV , IXBJ40N140 , IXBJ40N160 , IXBL20N300C , IHW20N135R5 , IXBT12N300HV , IXBT16N170AHV , IXBT20N300HV , IXBT20N360HV , IXBT22N300HV , IXBT42N300HV , IXBV22N300S , IXBX28N300HV .
History: IXBT12N300HV
Keywords - IXBL60N360 transistor spec
IXBL60N360 cross reference
IXBL60N360 equivalent finder
IXBL60N360 lookup
IXBL60N360 substitution
IXBL60N360 replacement
History: IXBT12N300HV
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