All IGBT. IXBL60N360 Datasheet

 

IXBL60N360 Datasheet and Replacement


   Type Designator: IXBL60N360
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 417 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 92 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 300 nS
   Coesⓘ - Output Capacitance, typ: 367 pF
   Qg ⓘ - Total Gate Charge, typ: 450 nC
   Package: I5PAK
 

 IXBL60N360 substitution

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IXBL60N360 Datasheet (PDF)

 ..1. Size:166K  ixys
 ixbl60n360.pdf pdf_icon

IXBL60N360

Advance Technical InformationHigh Voltage,VCES = 3600VIXBL60N360High Frequency,IC110 = 36ABiMOSFETTM MonolithicVCE(sat) 3.4VBipolar MOS Transistor(Electrically Isolated Tab)ISOPLUS i5-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3600 VVCGR TJ = 25C to 150C, RGE = 1M 3600 VGECVGES Continuous 20 V Isolated

 9.1. Size:184K  ixys
 ixbl64n250.pdf pdf_icon

IXBL60N360

Advance Technical InformationHigh Voltage, High Gain VCES = 2500VIXBL64N250BiMOSFETTM IC110 = 46AVCE(sat) 3.0VMonolithic BipolarMOS Transistor(Electrically Isolated Tab)ISOPLUS i5-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 V GE Isolated TabCVGES Continuous 25 VVGE

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MMG225WB170B6EN

Keywords - IXBL60N360 transistor datasheet

 IXBL60N360 cross reference
 IXBL60N360 equivalent finder
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