IXBX50N360HV PDF and Equivalents Search

 

IXBX50N360HV Specs and Replacement

Type Designator: IXBX50N360HV

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 660 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 125 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9 V @25℃

tr ⓘ - Rise Time, typ: 420 nS

Coesⓘ - Output Capacitance, typ: 195 pF

Package: TO247HV

 IXBX50N360HV Substitution

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IXBX50N360HV datasheet

 ..1. Size:215K  ixys
 ixbx50n360hv.pdf pdf_icon

IXBX50N360HV

Advance Technical Information BiMOSFETTM Monolithic VCES = 3600V IXBX50N360HV Bipolar MOS Transistor IC110 = 50A High Voltage, VCE(sat) 2.9V High Frequency TO-247PLUS-HV Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3600 V VCGR TJ = 25 C to 150 C, RGE = 1M 3600 V VGES Continuous 20 V G VGEM Transient 30 V E Tab C IC25 TC =... See More ⇒

 9.1. Size:213K  ixys
 ixbx55n300.pdf pdf_icon

IXBX50N360HV

High Voltage, High Gain VCES = 3000V IXBK55N300 BiMOSFETTM IC110 = 55A IXBX55N300 VCE(sat) 3.2V Monolithic Bipolar MOS Transistor TO-264 (IXBK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 150 C 3000 V E Tab VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 25 V PLUS247 (IXBX) VGEM Transient 35 V IC25 TC = 25 C ( Chip... See More ⇒

Specs: IXBT12N300HV , IXBT16N170AHV , IXBT20N300HV , IXBT20N360HV , IXBT22N300HV , IXBT42N300HV , IXBV22N300S , IXBX28N300HV , SGH80N60UFD , IXCH36N250 , IXCK36N250 , IXGA20N250 , IXGA20N250HV , IXGA24N60C4 , IXGC16N60B2 , IXGC16N60B2D1 , IXGC16N60C2 .

History: MUBW50-06A7

Keywords - IXBX50N360HV transistor spec

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