All IGBT. IXBX50N360HV Datasheet

 

IXBX50N360HV Datasheet and Replacement


   Type Designator: IXBX50N360HV
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 660 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 125 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 420 nS
   Coesⓘ - Output Capacitance, typ: 195 pF
   Package: TO247HV
 

 IXBX50N360HV substitution

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IXBX50N360HV Datasheet (PDF)

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 ixbx50n360hv.pdf pdf_icon

IXBX50N360HV

Advance Technical InformationBiMOSFETTM MonolithicVCES = 3600VIXBX50N360HVBipolar MOS TransistorIC110 = 50AHigh Voltage,VCE(sat) 2.9VHigh FrequencyTO-247PLUS-HVSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3600 VVCGR TJ = 25C to 150C, RGE = 1M 3600 VVGES Continuous 20 VGVGEM Transient 30 VETabCIC25 TC =

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IXBX50N360HV

High Voltage, High GainVCES = 3000VIXBK55N300BiMOSFETTMIC110 = 55AIXBX55N300VCE(sat) 3.2VMonolithic BipolarMOS TransistorTO-264 (IXBK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 150C 3000 VETabVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 25 VPLUS247 (IXBX)VGEM Transient 35 VIC25 TC = 25C ( Chip

Datasheet: IXBT12N300HV , IXBT16N170AHV , IXBT20N300HV , IXBT20N360HV , IXBT22N300HV , IXBT42N300HV , IXBV22N300S , IXBX28N300HV , IKW50N60T , IXCH36N250 , IXCK36N250 , IXGA20N250 , IXGA20N250HV , IXGA24N60C4 , IXGC16N60B2 , IXGC16N60B2D1 , IXGC16N60C2 .

Keywords - IXBX50N360HV transistor datasheet

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