IXBX50N360HV IGBT. Datasheet pdf. Equivalent
Type Designator: IXBX50N360HV
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 660 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 125 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 420 nS
Coesⓘ - Output Capacitance, typ: 195 pF
Qgⓘ - Total Gate Charge, typ: 210 nC
Package: TO247HV
IXBX50N360HV Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXBX50N360HV Datasheet (PDF)
ixbx50n360hv.pdf
Advance Technical InformationBiMOSFETTM MonolithicVCES = 3600VIXBX50N360HVBipolar MOS TransistorIC110 = 50AHigh Voltage,VCE(sat) 2.9VHigh FrequencyTO-247PLUS-HVSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3600 VVCGR TJ = 25C to 150C, RGE = 1M 3600 VVGES Continuous 20 VGVGEM Transient 30 VETabCIC25 TC =
ixbx55n300.pdf
High Voltage, High GainVCES = 3000VIXBK55N300BiMOSFETTMIC110 = 55AIXBX55N300VCE(sat) 3.2VMonolithic BipolarMOS TransistorTO-264 (IXBK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 150C 3000 VETabVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 25 VPLUS247 (IXBX)VGEM Transient 35 VIC25 TC = 25C ( Chip
Datasheet: IXBT12N300HV , IXBT16N170AHV , IXBT20N300HV , IXBT20N360HV , IXBT22N300HV , IXBT42N300HV , IXBV22N300S , IXBX28N300HV , NGD8201N , IXCH36N250 , IXCK36N250 , IXGA20N250 , IXGA20N250HV , IXGA24N60C4 , IXGC16N60B2 , IXGC16N60B2D1 , IXGC16N60C2 .
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