All IGBT. IXCH36N250 Datasheet

 

IXCH36N250 Datasheet and Replacement


   Type Designator: IXCH36N250
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 595 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 73 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 580 nS
   Coesⓘ - Output Capacitance, typ: 170 pF
   Package: TO247
      - IGBT Cross-Reference

 

IXCH36N250 Datasheet (PDF)

 ..1. Size:189K  ixys
 ixch36n250.pdf pdf_icon

IXCH36N250

High VoltageVCES = 2500VIXCH36N250BIMOSFETTM MonolithicIXCK36N250IC110 = 36ABipolar MOS TransistorVCE(sat) 3.3VExtended FBSOATO-247 ADSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VGC TabVGES Continuous 25 VEVGEM Transient 35 VTO-264IC25 TC = 25C 73 AIC110

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: JNG25T120HS | IGB30N60T | HGTP10N120BN | F3L75R07W2E3_B11 | CT20ASL-8 | STGB10M65DF2 | MMG75SR120UZA

Keywords - IXCH36N250 transistor datasheet

 IXCH36N250 cross reference
 IXCH36N250 equivalent finder
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