All IGBT. IXCH36N250 Datasheet

 

IXCH36N250 Datasheet and Replacement


   Type Designator: IXCH36N250
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 595 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic| ⓘ - Maximum Collector Current: 73 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 580 nS
   Coesⓘ - Output Capacitance, typ: 170 pF
   Qg ⓘ - Total Gate Charge, typ: 177 nC
   Package: TO247
 

 IXCH36N250 substitution

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IXCH36N250 Datasheet (PDF)

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IXCH36N250

High VoltageVCES = 2500VIXCH36N250BIMOSFETTM MonolithicIXCK36N250IC110 = 36ABipolar MOS TransistorVCE(sat) 3.3VExtended FBSOATO-247 ADSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VGC TabVGES Continuous 25 VEVGEM Transient 35 VTO-264IC25 TC = 25C 73 AIC110

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: NGTB40N65FL2WG | APTGS75X170E3 | IRGP4062D-EPBF | SRE15N065FSUDJ | MG50J1BS11 | F3L150R12W2H3-B11 | VS-GB55NA120UX

Keywords - IXCH36N250 transistor datasheet

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