All IGBT. IXCH36N250 Datasheet

 

IXCH36N250 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXCH36N250
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 595 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 73 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 580 nS
   Coesⓘ - Output Capacitance, typ: 170 pF
   Qgⓘ - Total Gate Charge, typ: 177 nC
   Package: TO247

 IXCH36N250 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXCH36N250 Datasheet (PDF)

 ..1. Size:189K  ixys
 ixch36n250.pdf

IXCH36N250 IXCH36N250

High VoltageVCES = 2500VIXCH36N250BIMOSFETTM MonolithicIXCK36N250IC110 = 36ABipolar MOS TransistorVCE(sat) 3.3VExtended FBSOATO-247 ADSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VGC TabVGES Continuous 25 VEVGEM Transient 35 VTO-264IC25 TC = 25C 73 AIC110

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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