IXCH36N250 Specs and Replacement
Type Designator: IXCH36N250
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 595 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 73 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
tr ⓘ - Rise Time, typ: 580 nS
Coesⓘ - Output Capacitance, typ: 170 pF
Package: TO247
IXCH36N250 Substitution - IGBT ⓘ Cross-Reference Search
IXCH36N250 datasheet
ixch36n250.pdf
High Voltage VCES = 2500V IXCH36N250 BIMOSFETTM Monolithic IXCK36N250 IC110 = 36A Bipolar MOS Transistor VCE(sat) 3.3V Extended FBSOA TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 2500 V VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V G C Tab VGES Continuous 25 V E VGEM Transient 35 V TO-264 IC25 TC = 25 C 73 A IC110... See More ⇒
Specs: IXBT16N170AHV , IXBT20N300HV , IXBT20N360HV , IXBT22N300HV , IXBT42N300HV , IXBV22N300S , IXBX28N300HV , IXBX50N360HV , GT45F122 , IXCK36N250 , IXGA20N250 , IXGA20N250HV , IXGA24N60C4 , IXGC16N60B2 , IXGC16N60B2D1 , IXGC16N60C2 , IXGC16N60C2D1 .
History: MWI50-12A7
Keywords - IXCH36N250 transistor spec
IXCH36N250 cross reference
IXCH36N250 equivalent finder
IXCH36N250 lookup
IXCH36N250 substitution
IXCH36N250 replacement
History: MWI50-12A7
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