All IGBT. IXGQ85N33PCD1 Datasheet

 

IXGQ85N33PCD1 Datasheet and Replacement


   Type Designator: IXGQ85N33PCD1
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 85 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 43 nS
   Coesⓘ - Output Capacitance, typ: 155 pF
   Package: TO3P
 

 IXGQ85N33PCD1 substitution

   - IGBT ⓘ Cross-Reference Search

 

IXGQ85N33PCD1 Datasheet (PDF)

 ..1. Size:142K  ixys
 ixgq85n33pcd1.pdf pdf_icon

IXGQ85N33PCD1

Advance Technical InformationPolarTM High SpeedVCES = 330 VIXGQ85N33PCD1ICP = 340 AIGBTVCE(sat) 2.1 Vwith Anti-Parallel Diodefor PDP Sustain CircuitSymbol Test Conditions Maximum RatingsTO-3PVCES TJ = 25C to 150C 330 VVGEM 30 VGIC25 TC = 25C, IGBT chip capability 85 ACE(TAB)ICP TJ 150C, tp 1 s, D 1% 340 AG = G

Datasheet: IXGA20N250HV , IXGA24N60C4 , IXGC16N60B2 , IXGC16N60B2D1 , IXGC16N60C2 , IXGC16N60C2D1 , IXGQ170N30PB , IXGQ240N30PB , YGW40N65F1 , IXGQ90N27PB , IXXN100N60B3H1 , IXXN110N65B4H1 , IXXN110N65C4H1 , IXXN200N60B3 , IXXN200N60B3H1 , IXXN200N60C3H1 , IXXH110N65C4 .

History: MUBW35-06A6K

Keywords - IXGQ85N33PCD1 transistor datasheet

 IXGQ85N33PCD1 cross reference
 IXGQ85N33PCD1 equivalent finder
 IXGQ85N33PCD1 lookup
 IXGQ85N33PCD1 substitution
 IXGQ85N33PCD1 replacement

 

 
Back to Top

 


 
.