All IGBT. IXGQ85N33PCD1 Datasheet

 

IXGQ85N33PCD1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXGQ85N33PCD1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 85 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 43 nS
   Coesⓘ - Output Capacitance, typ: 155 pF
   Qgⓘ - Total Gate Charge, typ: 80 nC
   Package: TO3P

 IXGQ85N33PCD1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGQ85N33PCD1 Datasheet (PDF)

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 ixgq85n33pcd1.pdf

IXGQ85N33PCD1 IXGQ85N33PCD1

Advance Technical InformationPolarTM High SpeedVCES = 330 VIXGQ85N33PCD1ICP = 340 AIGBTVCE(sat) 2.1 Vwith Anti-Parallel Diodefor PDP Sustain CircuitSymbol Test Conditions Maximum RatingsTO-3PVCES TJ = 25C to 150C 330 VVGEM 30 VGIC25 TC = 25C, IGBT chip capability 85 ACE(TAB)ICP TJ 150C, tp 1 s, D 1% 340 AG = G

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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