All IGBT. IXGQ85N33PCD1 Datasheet

 

IXGQ85N33PCD1 IGBT. Datasheet pdf. Equivalent

Type Designator: IXGQ85N33PCD1

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 150

Maximum Collector-Emitter Voltage |Vce|, V: 330

Collector-Emitter saturation Voltage |Vcesat|, V: 2.1

Maximum Gate-Emitter Voltage |Veg|, V: 30

Maximum Collector Current |Ic|, A: 85

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 43

Maximum Collector Capacity (Cc), pF: 155

Package: TO3P

IXGQ85N33PCD1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGQ85N33PCD1 Datasheet (PDF)

1.1. ixgq85n33pcd1.pdf Size:142K _igbt_a

IXGQ85N33PCD1 IXGQ85N33PCD1

Advance Technical Information PolarTM High Speed VCES = 330 V IXGQ85N33PCD1 ICP = 340 A IGBT ≤ VCE(sat) ≤ 2.1 V ≤ ≤ ≤ with Anti-Parallel Diode for PDP Sustain Circuit Symbol Test Conditions Maximum Ratings TO-3P VCES TJ = 25°C to 150°C 330 V VGEM ±30 V G IC25 TC = 25°C, IGBT chip capability 85 A C E (TAB) ICP TJ ≤ 150°C, tp ≤ 1 µs, D ≤ 1% 340 A G = G

Datasheet: IXGA20N250HV , IXGA24N60C4 , IXGC16N60B2 , IXGC16N60B2D1 , IXGC16N60C2 , IXGC16N60C2D1 , IXGQ170N30PB , IXGQ240N30PB , GT15N101 , IXGQ90N27PB , IXXN100N60B3H1 , IXXN110N65B4H1 , IXXN110N65C4H1 , IXXN200N60B3 , IXXN200N60B3H1 , IXXN200N60C3H1 , IXXH110N65C4 .

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IGBT: RJP30H2A | GT50JR22 | IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB |

 

 

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