All IGBT. IXGQ90N27PB Datasheet

 

IXGQ90N27PB Datasheet and Replacement


   Type Designator: IXGQ90N27PB
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 270 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 90 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 43 nS
   Coesⓘ - Output Capacitance, typ: 180 pF
   Package: TO3P
      - IGBT Cross-Reference

 

IXGQ90N27PB Datasheet (PDF)

 ..1. Size:109K  ixys
 ixgq90n27pb.pdf pdf_icon

IXGQ90N27PB

Preliminary Technical InformationPolarTMVCES = 270 VIXGQ90N27PBIGBTICP = 340 AVCE(sat) 2.1 Vfor PDP ApplicationsSymbol Test Conditions Maximum RatingsTO-3PVCES TJ = 25C to 150C 270 VVGEM 30 VGIC25 TC = 25C, IGBT chip capability 90 ACE(TAB)ICPEAK TJ 150C, tp 1 s, D 1% 340 AIC(RMS) Lead current limit 75 ASSOA VG

 7.1. Size:124K  ixys
 ixgq90n33tc-d4.pdf pdf_icon

IXGQ90N27PB

Preliminary Technical InformationVCES = 330VPlasma Display IXGQ90N33TCD4ICP = 360APower IGBTVCE(sat) 1.80VTrench Gate High SpeedSymbol Test Conditions Maximum Ratings TO-3P (IXGQ)VCES TJ = 25C to 150C 330 VVGEM 30 VIC25 TC = 25C, IGBT chip capability 90 AG ICP TJ 360 A 150C, tp 1s CE (TAB)

Datasheet: IXGA24N60C4 , IXGC16N60B2 , IXGC16N60B2D1 , IXGC16N60C2 , IXGC16N60C2D1 , IXGQ170N30PB , IXGQ240N30PB , IXGQ85N33PCD1 , TGPF30N43P , IXXN100N60B3H1 , IXXN110N65B4H1 , IXXN110N65C4H1 , IXXN200N60B3 , IXXN200N60B3H1 , IXXN200N60C3H1 , IXXH110N65C4 , IXXH150N60C3 .

History: AOTF5B65M2 | MMG300D120B6UC

Keywords - IXGQ90N27PB transistor datasheet

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