IXGQ90N27PB Specs and Replacement
Type Designator: IXGQ90N27PB
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 270 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 90 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
tr ⓘ - Rise Time, typ: 43 nS
Coesⓘ - Output Capacitance, typ: 180 pF
Package: TO3P
IXGQ90N27PB Substitution - IGBT ⓘ Cross-Reference Search
IXGQ90N27PB datasheet
ixgq90n27pb.pdf
Preliminary Technical Information PolarTM VCES = 270 V IXGQ90N27PB IGBT ICP = 340 A VCE(sat) 2.1 V for PDP Applications Symbol Test Conditions Maximum Ratings TO-3P VCES TJ = 25 C to 150 C 270 V VGEM 30 V G IC25 TC = 25 C, IGBT chip capability 90 A C E (TAB) ICPEAK TJ 150 C, tp 1 s, D 1% 340 A IC(RMS) Lead current limit 75 A SSOA VG... See More ⇒
ixgq90n33tc-d4.pdf
Preliminary Technical Information VCES = 330V Plasma Display IXGQ90N33TCD4 ICP = 360A Power IGBT VCE(sat) 1.80V Trench Gate High Speed Symbol Test Conditions Maximum Ratings TO-3P (IXGQ) VCES TJ = 25 C to 150 C 330 V VGEM 30 V IC25 TC = 25 C, IGBT chip capability 90 A G ICP TJ 360 A 150 C, tp 1 s C E (TAB) ... See More ⇒
Specs: IXGA24N60C4 , IXGC16N60B2 , IXGC16N60B2D1 , IXGC16N60C2 , IXGC16N60C2D1 , IXGQ170N30PB , IXGQ240N30PB , IXGQ85N33PCD1 , CRG75T60AK3HD , IXXN100N60B3H1 , IXXN110N65B4H1 , IXXN110N65C4H1 , IXXN200N60B3 , IXXN200N60B3H1 , IXXN200N60C3H1 , IXXH110N65C4 , IXXH150N60C3 .
Keywords - IXGQ90N27PB transistor spec
IXGQ90N27PB cross reference
IXGQ90N27PB equivalent finder
IXGQ90N27PB lookup
IXGQ90N27PB substitution
IXGQ90N27PB replacement
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
Popular searches
2sd424 | 2sc828 | 2n4125 | tip42c transistor | c1815 transistor datasheet | mj15003 | 2sa1015 | ksc3503