All IGBT. IXGQ90N27PB Datasheet

 

IXGQ90N27PB IGBT. Datasheet pdf. Equivalent

Type Designator: IXGQ90N27PB

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 150

Maximum Collector-Emitter Voltage |Vce|, V: 270

Collector-Emitter saturation Voltage |Vcesat|, V: 2.1

Maximum Gate-Emitter Voltage |Veg|, V: 30

Maximum Collector Current |Ic|, A: 90

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 43

Maximum Collector Capacity (Cc), pF: 180

Package: TO3P

IXGQ90N27PB Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGQ90N27PB Datasheet (PDF)

1.1. ixgq90n27pb.pdf Size:109K _igbt_a

IXGQ90N27PB
IXGQ90N27PB

Preliminary Technical Information PolarTM VCES = 270 V IXGQ90N27PB IGBT ICP = 340 A ≤ VCE(sat) ≤ 2.1 V ≤ ≤ ≤ for PDP Applications Symbol Test Conditions Maximum Ratings TO-3P VCES TJ = 25°C to 150°C 270 V VGEM ±30 V G IC25 TC = 25°C, IGBT chip capability 90 A C E (TAB) ICPEAK TJ ≤ 150°C, tp ≤ 1 µs, D ≤ 1% 340 A IC(RMS) Lead current limit 75 A SSOA VG

3.1. ixgq90n33tc-d4.pdf Size:124K _ixys

IXGQ90N27PB
IXGQ90N27PB

Preliminary Technical Information VCES = 330V Plasma Display IXGQ90N33TCD4 ICP = 360A Power IGBT ? VCE(sat) ? 1.80V ? ? ? Trench Gate High Speed Symbol Test Conditions Maximum Ratings TO-3P (IXGQ) VCES TJ = 25C to 150C 330 V VGEM 30 V IC25 TC = 25C, IGBT chip capability 90 A G ? ? ICP TJ ? ? 360 A ? 150C, tp ? ? ? 1?s ? ? C E (TAB) ? ? IDP TJ ? ? A ? 150C, tp ? ? ?

 

Datasheet: IXGA24N60C4 , IXGC16N60B2 , IXGC16N60B2D1 , IXGC16N60C2 , IXGC16N60C2D1 , IXGQ170N30PB , IXGQ240N30PB , IXGQ85N33PCD1 , 20N60C3DR , IXXN100N60B3H1 , IXXN110N65B4H1 , IXXN110N65C4H1 , IXXN200N60B3 , IXXN200N60B3H1 , IXXN200N60C3H1 , IXXH110N65C4 , IXXH150N60C3 .

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IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |