All IGBT. IXXH40N65B4 Datasheet

 

IXXH40N65B4 Datasheet and Replacement


   Type Designator: IXXH40N65B4
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 455 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 53 nS
   Coesⓘ - Output Capacitance, typ: 103 pF
   Qgⓘ - Total Gate Charge, typ: 77 nC
   Package: TO247
      - IGBT Cross-Reference

 

IXXH40N65B4 Datasheet (PDF)

 ..1. Size:227K  ixys
 ixxh40n65b4.pdf pdf_icon

IXXH40N65B4

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXXH40N65B4GenX4TM IC110 = 40A VCE(sat) 2.0V tfi(typ) = 54nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGVGE

 0.1. Size:183K  ixys
 ixxh40n65b4h1.pdf pdf_icon

IXXH40N65B4

XPTTM 650V IGBT VCES = 650VIXXH40N65B4H1GenX4TM w/ Sonic IC110 = 40ADiode VCE(sat) 2.0V tfi(typ) = 54nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGVGES Continuous 20

Datasheet: IXXN200N60B3 , IXXN200N60B3H1 , IXXN200N60C3H1 , IXXH110N65C4 , IXXH150N60C3 , IXXH30N60B3 , IXXH30N60C3 , IXXH30N65B4 , MGD623S , IXXH40N65B4H1 , IXXH60N65B4 , IXXH60N65B4H1 , IXXH60N65C4 , IXGH10N60 , IXGH10N60A , IXGH40N60 , IXGH40N60A .

History: VS-GB75LA60UF | AOK20B120D1

Keywords - IXXH40N65B4 transistor datasheet

 IXXH40N65B4 cross reference
 IXXH40N65B4 equivalent finder
 IXXH40N65B4 lookup
 IXXH40N65B4 substitution
 IXXH40N65B4 replacement

 

 
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