All IGBT. IXXH40N65B4H1 Datasheet

 

IXXH40N65B4H1 Datasheet and Replacement


   Type Designator: IXXH40N65B4H1
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 455 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 53 nS
   Coesⓘ - Output Capacitance, typ: 200 pF
   Package: TO247
 

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IXXH40N65B4H1 Datasheet (PDF)

 ..1. Size:183K  ixys
 ixxh40n65b4h1.pdf pdf_icon

IXXH40N65B4H1

XPTTM 650V IGBT VCES = 650VIXXH40N65B4H1GenX4TM w/ Sonic IC110 = 40ADiode VCE(sat) 2.0V tfi(typ) = 54nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGVGES Continuous 20

 3.1. Size:227K  ixys
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IXXH40N65B4H1

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXXH40N65B4GenX4TM IC110 = 40A VCE(sat) 2.0V tfi(typ) = 54nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGVGE

Datasheet: IXXN200N60B3H1 , IXXN200N60C3H1 , IXXH110N65C4 , IXXH150N60C3 , IXXH30N60B3 , IXXH30N60C3 , IXXH30N65B4 , IXXH40N65B4 , IRG4PC50U , IXXH60N65B4 , IXXH60N65B4H1 , IXXH60N65C4 , IXGH10N60 , IXGH10N60A , IXGH40N60 , IXGH40N60A , IXGM40N60 .

History: MMG600WB170B6E4N

Keywords - IXXH40N65B4H1 transistor datasheet

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