All IGBT. IXXH40N65B4H1 Datasheet

 

IXXH40N65B4H1 Datasheet and Replacement


   Type Designator: IXXH40N65B4H1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 455 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 53 nS
   Coesⓘ - Output Capacitance, typ: 200 pF
   Qg ⓘ - Total Gate Charge, typ: 77 nC
   Package: TO247
 

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IXXH40N65B4H1 Datasheet (PDF)

 ..1. Size:183K  ixys
 ixxh40n65b4h1.pdf pdf_icon

IXXH40N65B4H1

XPTTM 650V IGBT VCES = 650VIXXH40N65B4H1GenX4TM w/ Sonic IC110 = 40ADiode VCE(sat) 2.0V tfi(typ) = 54nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGVGES Continuous 20

 3.1. Size:227K  ixys
 ixxh40n65b4.pdf pdf_icon

IXXH40N65B4H1

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXXH40N65B4GenX4TM IC110 = 40A VCE(sat) 2.0V tfi(typ) = 54nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGVGE

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

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