IXXH40N65B4H1 PDF and Equivalents Search

 

IXXH40N65B4H1 Specs and Replacement

Type Designator: IXXH40N65B4H1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 455 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 120 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 53 nS

Coesⓘ - Output Capacitance, typ: 200 pF

Package: TO247

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IXXH40N65B4H1 datasheet

 ..1. Size:183K  ixys
 ixxh40n65b4h1.pdf pdf_icon

IXXH40N65B4H1

XPTTM 650V IGBT VCES = 650V IXXH40N65B4H1 GenX4TM w/ Sonic IC110 = 40A Diode VCE(sat) 2.0V tfi(typ) = 54ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V G VGES Continuous 20... See More ⇒

 3.1. Size:227K  ixys
 ixxh40n65b4.pdf pdf_icon

IXXH40N65B4H1

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXXH40N65B4 GenX4TM IC110 = 40A VCE(sat) 2.0V tfi(typ) = 54ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V G VGE... See More ⇒

Specs: IXXN200N60B3H1 , IXXN200N60C3H1 , IXXH110N65C4 , IXXH150N60C3 , IXXH30N60B3 , IXXH30N60C3 , IXXH30N65B4 , IXXH40N65B4 , FGH30S130P , IXXH60N65B4 , IXXH60N65B4H1 , IXXH60N65C4 , IXGH10N60 , IXGH10N60A , IXGH40N60 , IXGH40N60A , IXGM40N60 .

History: IXXH60N65B4H1

Keywords - IXXH40N65B4H1 transistor spec

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