IXXH80N65B4H1 Specs and Replacement
Type Designator: IXXH80N65B4H1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 625 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 160 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
tr ⓘ - Rise Time, typ: 90 nS
Coesⓘ - Output Capacitance, typ: 296 pF
Package: TO247
IXXH80N65B4H1 Substitution - IGBT ⓘ Cross-Reference Search
IXXH80N65B4H1 datasheet
ixxh80n65b4h1.pdf
XPTTM 650V IGBT VCES = 650V IXXH80N65B4H1 GenX4TM w/ Sonic IC110 = 80A Diode VCE(sat) 2.1V tfi(typ) = 63ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V G VGES Continuous 20... See More ⇒
ixxh80n65b4.pdf
Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXXH80N65B4 GenX4TM IC110 = 80A VCE(sat) 2.1V tfi(typ) = 63ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V G VGE... See More ⇒
Specs: IXGH10N60A , IXGH40N60 , IXGH40N60A , IXGM40N60 , IXGM40N60A , IXGP10N60 , IXGP10N60A , IXXH80N65B4 , BT60T60ANFK , IXXK110N60B4H1 , IXXK110N65B4H1 , IXXK160N65B4 , IXXK160N65C4 , IXXK200N65B4 , IXXK300N60B3 , IXXK300N60C3 , IXXQ30N60B3M .
History: IXXH60N65B4H1
Keywords - IXXH80N65B4H1 transistor spec
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History: IXXH60N65B4H1
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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