All IGBT. IXXK300N60B3 Datasheet

 

IXXK300N60B3 Datasheet and Replacement


   Type Designator: IXXK300N60B3
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 2300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 550 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 87 nS
   Coesⓘ - Output Capacitance, typ: 757 pF
   Qg ⓘ - Total Gate Charge, typ: 460 nC
   Package: TO264
 

 IXXK300N60B3 substitution

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IXXK300N60B3 Datasheet (PDF)

 ..1. Size:220K  ixys
 ixxk300n60b3.pdf pdf_icon

IXXK300N60B3

Advance Technical InformationVCES = 600VXPTTM 600V IGBTs IXXK300N60B3IC110 = 300AGenX3TM IXXX300N60B3 VCE(sat) 1.6V tfi(typ) = 95nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 V GCVCGR TJ = 25C to 175C, RGE = 1M 600 VETabVGES Continuous 20 V

 4.1. Size:223K  ixys
 ixxk300n60c3.pdf pdf_icon

IXXK300N60B3

Advance Technical InformationVCES = 600VXPTTM 600V IGBTs IXXK300N60C3IC110 = 300AGenX3TM IXXX300N60C3 VCE(sat) 2.0V tfi(typ) = 82nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 V GCVCGR TJ = 25C to 175C, RGE = 1M 600 VETabVGES Continuous 20 V

Datasheet: IXGP10N60A , IXXH80N65B4 , IXXH80N65B4H1 , IXXK110N60B4H1 , IXXK110N65B4H1 , IXXK160N65B4 , IXXK160N65C4 , IXXK200N65B4 , HGTG30N60A4 , IXXK300N60C3 , IXXQ30N60B3M , IXXX100N60B3H1 , IXXX110N60B4H1 , IXXX110N65B4H1 , IXXX160N65B4 , IXXX160N65C4 , IXXX200N65B4 .

History: SKM300GA123D

Keywords - IXXK300N60B3 transistor datasheet

 IXXK300N60B3 cross reference
 IXXK300N60B3 equivalent finder
 IXXK300N60B3 lookup
 IXXK300N60B3 substitution
 IXXK300N60B3 replacement

 

 
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