All IGBT. IXXQ30N60B3M Datasheet

 

IXXQ30N60B3M Datasheet and Replacement


   Type Designator: IXXQ30N60B3M
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 90 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 33 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 137 pF
   Package: TO3PF
      - IGBT Cross-Reference

 

IXXQ30N60B3M Datasheet (PDF)

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IXXQ30N60B3M

Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXQ30N60B3MGenX3TM IC110 = 19A VCE(sat) 1.85V (Electrically Isolated Tab)tfi(typ) = 125nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingOVERMOLDED(IXXQ...M) OUTLINESymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCG

Datasheet: IXXH80N65B4H1 , IXXK110N60B4H1 , IXXK110N65B4H1 , IXXK160N65B4 , IXXK160N65C4 , IXXK200N65B4 , IXXK300N60B3 , IXXK300N60C3 , RJH60F7BDPQ-A0 , IXXX100N60B3H1 , IXXX110N60B4H1 , IXXX110N65B4H1 , IXXX160N65B4 , IXXX160N65C4 , IXXX200N65B4 , IXXX300N60C3 , IXYH100N65B3 .

History: APT40GP60BG | IXGT20N120B

Keywords - IXXQ30N60B3M transistor datasheet

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 IXXQ30N60B3M equivalent finder
 IXXQ30N60B3M lookup
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 IXXQ30N60B3M replacement

 

 
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