All IGBT. IXXQ30N60B3M Datasheet

 

IXXQ30N60B3M IGBT. Datasheet pdf. Equivalent


   Type Designator: IXXQ30N60B3M
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 90 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 33 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 137 pF
   Qgⓘ - Total Gate Charge, typ: 39 nC
   Package: TO3PF

 IXXQ30N60B3M Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXXQ30N60B3M Datasheet (PDF)

 ..1. Size:197K  ixys
 ixxq30n60b3m.pdf

IXXQ30N60B3M IXXQ30N60B3M

Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXQ30N60B3MGenX3TM IC110 = 19A VCE(sat) 1.85V (Electrically Isolated Tab)tfi(typ) = 125nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingOVERMOLDED(IXXQ...M) OUTLINESymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCG

Datasheet: IXXH80N65B4H1 , IXXK110N60B4H1 , IXXK110N65B4H1 , IXXK160N65B4 , IXXK160N65C4 , IXXK200N65B4 , IXXK300N60B3 , IXXK300N60C3 , GT30F132 , IXXX100N60B3H1 , IXXX110N60B4H1 , IXXX110N65B4H1 , IXXX160N65B4 , IXXX160N65C4 , IXXX200N65B4 , IXXX300N60C3 , IXYH100N65B3 .

 

 
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