IXXQ30N60B3M Specs and Replacement
Type Designator: IXXQ30N60B3M
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 90 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 33 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
tr ⓘ - Rise Time, typ: 36 nS
Coesⓘ - Output Capacitance, typ: 137 pF
Package: TO3PF
IXXQ30N60B3M Substitution - IGBTⓘ Cross-Reference Search
IXXQ30N60B3M datasheet
ixxq30n60b3m.pdf
Advance Technical Information XPTTM 600V IGBT VCES = 600V IXXQ30N60B3M GenX3TM IC110 = 19A VCE(sat) 1.85V (Electrically Isolated Tab) tfi(typ) = 125ns Extreme Light Punch Through IGBT for 5-30 kHz Switching OVERMOLDED (IXXQ...M) OUTLINE Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCG... See More ⇒
Specs: IXXH80N65B4H1, IXXK110N60B4H1, IXXK110N65B4H1, IXXK160N65B4, IXXK160N65C4, IXXK200N65B4, IXXK300N60B3, IXXK300N60C3, IRGB20B60PD1, IXXX100N60B3H1, IXXX110N60B4H1, IXXX110N65B4H1, IXXX160N65B4, IXXX160N65C4, IXXX200N65B4, IXXX300N60C3, IXYH100N65B3
Keywords - IXXQ30N60B3M transistor spec
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History: IXXK300N60B3
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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