IXYH30N170C Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IXYH30N170C Specs and Replacement

Type Designator: IXYH30N170C

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 520 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 110 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.8 V @25℃

tr ⓘ - Rise Time, typ: 13 nS

Coesⓘ - Output Capacitance, typ: 124 pF

Package: TO247

IXYH30N170C Substitution

- IGBT ⓘ Cross-Reference Search

IXYH30N170C datasheet

..1. Size:226K ixys
ixyh30n170c.pdf pdf_icon

Advance Technical Information VCES = 1700V High Voltage IXYH30N170C IC110 = 30A XPTTM IGBT VCE(sat) 4.8V tfi(typ) = 102ns TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 1700 V G VCGR TJ = 25 C to 175 C, RGE = 1M 1700 V C Tab E VGES Continuous 20 V VGEM Transient 30 V G = ... See More ⇒

6.1. Size:188K ixys
ixyp30n120c3 ixyh30n120c3.pdf pdf_icon

1200V XPTTM VCES = 1200V IXYP30N120C3 GenX3TM IGBTs IC110 = 30A IXYH30N120C3 VCE(sat) 3.3V tfi(typ) = 88ns High-Speed IGBT for 20-50 kHz Switching TO-220 (IXYP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 1200 V G C Tab E VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V VGES Continuous 2... See More ⇒

6.2. Size:428K ixys
ixyh30n120c3.pdf pdf_icon

N E W P R O D U C T B R I E F Efficiency Through Technology 1200V XPT IGBTs Extreme-Light Punch-Through IGBTs for High-Speed Hard-Switching Applications October 2012 OVERVIEW TO-247 IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica- tion... See More ⇒

6.3. Size:1279K ixys
ixyh30n120c3d1.pdf pdf_icon