All IGBT. IXYH30N170C Datasheet

 

IXYH30N170C IGBT. Datasheet pdf. Equivalent


   Type Designator: IXYH30N170C
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 520 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 110 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 13 nS
   Coesⓘ - Output Capacitance, typ: 124 pF
   Qgⓘ - Total Gate Charge, typ: 92 nC
   Package: TO247

 IXYH30N170C Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXYH30N170C Datasheet (PDF)

 ..1. Size:226K  ixys
 ixyh30n170c.pdf

IXYH30N170C IXYH30N170C

Advance Technical InformationVCES = 1700VHigh Voltage IXYH30N170CIC110 = 30AXPTTM IGBT VCE(sat) 4.8V tfi(typ) = 102nsTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1700 VGVCGR TJ = 25C to 175C, RGE = 1M 1700 VC TabEVGES Continuous 20 VVGEM Transient 30 VG =

 6.1. Size:188K  ixys
 ixyp30n120c3 ixyh30n120c3.pdf

IXYH30N170C IXYH30N170C

1200V XPTTM VCES = 1200VIXYP30N120C3GenX3TM IGBTs IC110 = 30AIXYH30N120C3 VCE(sat) 3.3V tfi(typ) = 88nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-220 (IXYP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1200 VGCTabEVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous 2

 6.2. Size:428K  ixys
 ixyh30n120c3.pdf

IXYH30N170C IXYH30N170C

N E W P R O D U C T B R I E FEfficiency Through Technology1200V XPT IGBTsExtreme-Light Punch-Through IGBTs for High-Speed Hard-Switching ApplicationsOctober 2012OVERVIEWTO-247IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica-tion

 6.3. Size:1279K  ixys
 ixyh30n120c3d1.pdf

IXYH30N170C IXYH30N170C

1200V XPTTM IGBT VCES = 1200VIXYH30N120C3D1GenX3TM w/ Diode IC110 = 30AVCE(sat) 3.3Vtfi(typ) = 88nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEVGEM Transient 30 VIC25 TC = 25C 66 AG = Gate C = Collect

Datasheet: IXYH100N65B3 , IXYH100N65C3 , IXYH120N65B3 , IXYH120N65C3 , IXYH20N65B3 , IXYH20N65C3 , IXYH24N90C3 , IXYH24N90C3D1 , RJP30H2A , IXYH30N450HV , IXYH30N65B3D1 , IXYH30N65C3 , IXYH30N65C3H1 , IXYP20N65B3 , IXYP20N65B3D1 , IXYP20N65C3D1 , IXYP20N65C3D1M .

 

 
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