IXYH30N170C - аналоги, параметры транзистора - Справочник транзисторов

IXYH30N170C даташит

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Advance Technical Information VCES = 1700V High Voltage IXYH30N170C IC110 = 30A XPTTM IGBT VCE(sat) 4.8V tfi(typ) = 102ns TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 1700 V G VCGR TJ = 25 C to 175 C, RGE = 1M 1700 V C Tab E VGES Continuous 20 V VGEM Transient 30 V G =

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1200V XPTTM VCES = 1200V IXYP30N120C3 GenX3TM IGBTs IC110 = 30A IXYH30N120C3 VCE(sat) 3.3V tfi(typ) = 88ns High-Speed IGBT for 20-50 kHz Switching TO-220 (IXYP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 1200 V G C Tab E VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V VGES Continuous 2

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N E W P R O D U C T B R I E F Efficiency Through Technology 1200V XPT IGBTs Extreme-Light Punch-Through IGBTs for High-Speed Hard-Switching Applications October 2012 OVERVIEW TO-247 IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica- tion

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