IXYP8N90C3 PDF and Equivalents Search

 

IXYP8N90C3 Specs and Replacement

Type Designator: IXYP8N90C3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 120 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 24 pF

Package: TO220

 IXYP8N90C3 Substitution

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IXYP8N90C3 datasheet

 ..1. Size:178K  ixys
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IXYP8N90C3

Advance Technical Information 900V XPTTM IGBTs VCES = 900V IXYY8N90C3 GenX3TM IC110 = 8A IXYP8N90C3 VCE(sat) 2.5V tfi(typ) = 130ns High-Speed IGBT for 20-50 kHz Switching TO-252 (IXYY) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 175 C 900 V C (Tab) VCGR TJ = 25 C to 175 C, RGE = 1M 900 V VGES Continuous 20 V TO-220 (IXYP) VG... See More ⇒

 0.1. Size:336K  ixys
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IXYP8N90C3

Preliminary Technical Information 900V XPTTM IGBTs VCES = 900V IXYA8N90C3D1 GenX3TM w/Diode IC110 = 8A IXYP8N90C3D1 VCE(sat) 2.5V tfi(typ) = 130ns High-Speed IGBT for 20-50 kHz Switching TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 175 C 900 V C (Tab) VCGR TJ = 25 C to 175 C, RGE = 1M 900 V VGES Continuous 20 V... See More ⇒

Specs: IXYH30N65C3 , IXYH30N65C3H1 , IXYP20N65B3 , IXYP20N65B3D1 , IXYP20N65C3D1 , IXYP20N65C3D1M , IXYP30N65C3 , IXYP50N65C3 , BT40T60ANF , IXYQ30N65B3D1 , IXYQ40N65B3D1 , IXYQ40N65C3D1 , IXYT20N120C3D1HV , IXYT30N450HV , IXYT30N65C3H1HV , IXYX100N120B3 , IXYX100N65B3D1 .

Keywords - IXYP8N90C3 transistor spec

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