All IGBT. IXYQ40N65B3D1 Datasheet

 

IXYQ40N65B3D1 Datasheet and Replacement


   Type Designator: IXYQ40N65B3D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 86 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 37 nS
   Coesⓘ - Output Capacitance, typ: 210 pF
   Qg ⓘ - Total Gate Charge, typ: 68 nC
   Package: TO3P
 

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IXYQ40N65B3D1 Datasheet (PDF)

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IXYQ40N65B3D1

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYH40N65B3D1GenX3TM w/ Diode IC110 = 40AIXYQ40N65B3D1 VCE(sat) 2.0V tfi(typ) = 73nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-247 (IXYH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C,

 5.1. Size:197K  ixys
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IXYQ40N65B3D1

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXYH40N65C3D1GenX3TM w/ Diode IC110 = 40AIXYQ40N65C3D1 VCE(sat) 2.35V tfi(typ) = 20nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247 (IXYH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: SKM195GAR063DN | APTGT75X120TE3

Keywords - IXYQ40N65B3D1 transistor datasheet

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