IXYT30N65C3H1HV PDF and Equivalents Search

 

IXYT30N65C3H1HV Specs and Replacement

Type Designator: IXYT30N65C3H1HV

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 270 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃

tr ⓘ - Rise Time, typ: 42 nS

Coesⓘ - Output Capacitance, typ: 173 pF

Package: TO268HV

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IXYT30N65C3H1HV datasheet

 0.1. Size:268K  ixys
 ixyt30n65c3h1hv.pdf pdf_icon

IXYT30N65C3H1HV

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYT30N65C3H1HV GenX3TM w/ Sonic IC110 = 30A IXYH30N65C3H1 Diode VCE(sat) 2.7V tfi(typ) = 24ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-268HV Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 175 C 650 V E VCGR TJ = 25... See More ⇒

 7.1. Size:245K  ixys
 ixyt30n450hv.pdf pdf_icon

IXYT30N65C3H1HV

Advance Technical Information High Voltage XPTTM VCES = 4500V IXYT30N450HV IGBT IXYH30N450HV IC110 = 30A VCE(sat) 3.9V TO-268HV (IXYT) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 4500 V TO-247HV (IXYH) VCGR TJ = 25 C to 150 C, RGE = 1M 4500 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C 60 A G I... See More ⇒

Specs: IXYP30N65C3 , IXYP50N65C3 , IXYP8N90C3 , IXYQ30N65B3D1 , IXYQ40N65B3D1 , IXYQ40N65C3D1 , IXYT20N120C3D1HV , IXYT30N450HV , FGH60N60SFD , IXYX100N120B3 , IXYX100N65B3D1 , IXYX100N65C3D1 , IXYX120N120B3 , IXYX40N450HV , IXYH40N65B3 , IXYH40N65B3D1 , IXYH40N65C3 .

History: IXYX100N120B3

Keywords - IXYT30N65C3H1HV transistor spec

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