All IGBT. IXYT30N65C3H1HV Datasheet

 

IXYT30N65C3H1HV Datasheet and Replacement


   Type Designator: IXYT30N65C3H1HV
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 270 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 42 nS
   Coesⓘ - Output Capacitance, typ: 173 pF
   Qgⓘ - Total Gate Charge, typ: 44 nC
   Package: TO268HV
      - IGBT Cross-Reference

 

IXYT30N65C3H1HV Datasheet (PDF)

 0.1. Size:268K  ixys
 ixyt30n65c3h1hv.pdf pdf_icon

IXYT30N65C3H1HV

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYT30N65C3H1HVGenX3TM w/ Sonic IC110 = 30AIXYH30N65C3H1Diode VCE(sat) 2.7V tfi(typ) = 24nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-268HVSymbol Test Conditions Maximum RatingsGVCES TJ = 25C to 175C 650 VEVCGR TJ = 25

 7.1. Size:245K  ixys
 ixyt30n450hv.pdf pdf_icon

IXYT30N65C3H1HV

Advance Technical InformationHigh Voltage XPTTMVCES = 4500VIXYT30N450HVIGBTIXYH30N450HVIC110 = 30AVCE(sat) 3.9VTO-268HV (IXYT)GE C (Tab)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 4500 VTO-247HV (IXYH)VCGR TJ = 25C to 150C, RGE = 1M 4500 VVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 60 AGI

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

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