IXYX40N450HV Specs and Replacement
Type Designator: IXYX40N450HV
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 660 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 95 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.9 V @25℃
tr ⓘ - Rise Time, typ: 330 nS
Coesⓘ - Output Capacitance, typ: 146 pF
Package: TO247PLUS-HV IXYX40N450HV Substitution - IGBT ⓘ Cross-Reference Search
IXYX40N450HV datasheet
ixyx40n450hv.pdf
Advance Technical Information High Voltage XPTTM VCES = 4500V IXYX40N450HV IGBT IC110 = 40A VCE(sat) 3.9V TO-247PLUS-HV Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 4500 V G VCGR TJ = 25 C to 150 C, RGE = 1M 4500 V E Tab VGES Continuous 20 V C VGEM Transient 30 V IC25 TC = 25 C 95 A G = Gate E = Emitter IC110 TC = 110 C ... See More ⇒
Specs: IXYQ40N65C3D1 , IXYT20N120C3D1HV , IXYT30N450HV , IXYT30N65C3H1HV , IXYX100N120B3 , IXYX100N65B3D1 , IXYX100N65C3D1 , IXYX120N120B3 , IRGP4063D , IXYH40N65B3 , IXYH40N65B3D1 , IXYH40N65C3 , IXYH40N65C3D1 , IXYH40N65C3H1 , IXYH40N90C3 , IXYH40N90C3D1 , IXYH50N65C3 .
Keywords - IXYX40N450HV transistor spec
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