All IGBT. IXYX40N450HV Datasheet

 

IXYX40N450HV Datasheet and Replacement


   Type Designator: IXYX40N450HV
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 660 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 95 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.9 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 330 nS
   Coesⓘ - Output Capacitance, typ: 146 pF
   Package: TO247PLUS-HV
 

 IXYX40N450HV substitution

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IXYX40N450HV Datasheet (PDF)

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IXYX40N450HV

Advance Technical InformationHigh Voltage XPTTMVCES = 4500VIXYX40N450HVIGBTIC110 = 40AVCE(sat) 3.9VTO-247PLUS-HVSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 4500 VGVCGR TJ = 25C to 150C, RGE = 1M 4500 VETabVGES Continuous 20 V CVGEM Transient 30 VIC25 TC = 25C 95 AG = Gate E = EmitterIC110 TC = 110C

Datasheet: IXYQ40N65C3D1 , IXYT20N120C3D1HV , IXYT30N450HV , IXYT30N65C3H1HV , IXYX100N120B3 , IXYX100N65B3D1 , IXYX100N65C3D1 , IXYX120N120B3 , RJH3047 , IXYH40N65B3 , IXYH40N65B3D1 , IXYH40N65C3 , IXYH40N65C3D1 , IXYH40N65C3H1 , IXYH40N90C3 , IXYH40N90C3D1 , IXYH50N65C3 .

Keywords - IXYX40N450HV transistor datasheet

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