IXYH60N90C3 PDF and Equivalents Search

 

IXYH60N90C3 Specs and Replacement

Type Designator: IXYH60N90C3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 750 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 140 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃

tr ⓘ - Rise Time, typ: 77 nS

Coesⓘ - Output Capacitance, typ: 175 pF

Package: TO247

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IXYH60N90C3 datasheet

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IXYH60N90C3

Advance Technical Information 900V XPTTM IGBT VCES = 900V IXYH60N90C3 GenX3TM IC110 = 60A VCE(sat) 2.7V tfi(typ) = 88ns High-Speed IGBT for 20-50 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 900 V VCGR TJ = 25 C to 175 C, RGE = 1M 900 V G VGES Continuous 20 V C Tab E VGEM Transient 30 V IC25 TC = ... See More ⇒

Specs: IXYH40N65C3 , IXYH40N65C3D1 , IXYH40N65C3H1 , IXYH40N90C3 , IXYH40N90C3D1 , IXYH50N65C3 , IXYH50N65C3D1 , IXYH50N65C3H1 , IRGP4086 , IXYH75N65C3 , IXYH75N65C3D1 , IXYH75N65C3H1 , IXYH80N90C3 , IXYJ30N120C3D1 , IXYK100N120B3 , IXYK100N65B3D1 , IXYK100N65C3D1 .

Keywords - IXYH60N90C3 transistor spec

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