All IGBT. IXYH60N90C3 Datasheet

 

IXYH60N90C3 Datasheet and Replacement


   Type Designator: IXYH60N90C3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 750 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 140 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 77 nS
   Coesⓘ - Output Capacitance, typ: 175 pF
   Package: TO247
      - IGBT Cross-Reference

 

IXYH60N90C3 Datasheet (PDF)

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IXYH60N90C3

Advance Technical Information900V XPTTM IGBT VCES = 900VIXYH60N90C3GenX3TM IC110 = 60A VCE(sat) 2.7V tfi(typ) = 88nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 900 VVCGR TJ = 25C to 175C, RGE = 1M 900 VGVGES Continuous 20 VC TabEVGEM Transient 30 VIC25 TC =

Datasheet: IXYH40N65C3 , IXYH40N65C3D1 , IXYH40N65C3H1 , IXYH40N90C3 , IXYH40N90C3D1 , IXYH50N65C3 , IXYH50N65C3D1 , IXYH50N65C3H1 , CRG15T120BNR3S , IXYH75N65C3 , IXYH75N65C3D1 , IXYH75N65C3H1 , IXYH80N90C3 , IXYJ30N120C3D1 , IXYK100N120B3 , IXYK100N65B3D1 , IXYK100N65C3D1 .

History: IXXH100N60B3

Keywords - IXYH60N90C3 transistor datasheet

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