IXYH80N90C3 Datasheet. Specs and Replacement

Type Designator: IXYH80N90C3  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 830 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 165 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃

tr ⓘ - Rise Time, typ: 103 nS

Coesⓘ - Output Capacitance, typ: 243 pF

Package: TO247

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IXYH80N90C3 datasheet

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IXYH80N90C3

Advance Technical Information 900V XPTTM IGBTs VCES = 900V IXYT80N90C3 GenX3TM IC110 = 80A IXYH80N90C3 VCE(sat) 2.7V tfi(typ) = 86ns High-Speed IGBT for 20-50 kHz Switching TO-268 (IXYT) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TJ = 25 C to 175 C 900 V VCGR TJ = 25 C to 175 C, RGE = 1M 900 V TO-247 (IXYH) VGES Continuous 20 V ... See More ⇒

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IXYH80N90C3

1200V XPTTM IGBT VCES = 1200V IXYH82N120C3 GenX3TM IC110 = 82A VCE(sat) 3.20V tfi(typ) = 93ns High-Speed IGBT for 20-50 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 1200 V VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V G VGES Continuous 20 V C Tab E VGEM Transient ... See More ⇒

Specs: IXYH40N90C3D1, IXYH50N65C3, IXYH50N65C3D1, IXYH50N65C3H1, IXYH60N90C3, IXYH75N65C3, IXYH75N65C3D1, IXYH75N65C3H1, SGH80N60UFD, IXYJ30N120C3D1, IXYK100N120B3, IXYK100N65B3D1, IXYK100N65C3D1, IXYK120N120B3, IXYK140N90C3, IXYL60N450, IXYP10N65C3

Keywords - IXYH80N90C3 transistor spec

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