All IGBT. IXYH80N90C3 Datasheet

 

IXYH80N90C3 Datasheet and Replacement


   Type Designator: IXYH80N90C3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 830 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 165 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 103 nS
   Coesⓘ - Output Capacitance, typ: 243 pF
   Package: TO247
      - IGBT Cross-Reference

 

IXYH80N90C3 Datasheet (PDF)

 ..1. Size:184K  ixys
 ixyh80n90c3.pdf pdf_icon

IXYH80N90C3

Advance Technical Information900V XPTTM IGBTs VCES = 900VIXYT80N90C3GenX3TM IC110 = 80AIXYH80N90C3 VCE(sat) 2.7V tfi(typ) = 86nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-268 (IXYT)GESymbol Test Conditions Maximum RatingsC (Tab)VCES TJ = 25C to 175C 900 VVCGR TJ = 25C to 175C, RGE = 1M 900 VTO-247 (IXYH)VGES Continuous 20 V

 9.1. Size:199K  ixys
 ixyh82n120c3.pdf pdf_icon

IXYH80N90C3

1200V XPTTM IGBT VCES = 1200VIXYH82N120C3GenX3TM IC110 = 82A VCE(sat) 3.20V tfi(typ) = 93nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1200 VVCGR TJ = 25C to 175C, RGE = 1M 1200 VGVGES Continuous 20 VC TabEVGEM Transient

Datasheet: IXYH40N90C3D1 , IXYH50N65C3 , IXYH50N65C3D1 , IXYH50N65C3H1 , IXYH60N90C3 , IXYH75N65C3 , IXYH75N65C3D1 , IXYH75N65C3H1 , GT30F133 , IXYJ30N120C3D1 , IXYK100N120B3 , IXYK100N65B3D1 , IXYK100N65C3D1 , IXYK120N120B3 , IXYK140N90C3 , IXYL60N450 , IXYP10N65C3 .

History: 7MBR15SA120 | CM200E3U-24F | SIGC03T60E | CRG05T60A44S-G | NCE100ED65VTP | BLG20T65FDLA-P | 7MBR25SA120-01

Keywords - IXYH80N90C3 transistor datasheet

 IXYH80N90C3 cross reference
 IXYH80N90C3 equivalent finder
 IXYH80N90C3 lookup
 IXYH80N90C3 substitution
 IXYH80N90C3 replacement

 

 
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