All IGBT. IXYL60N450 Datasheet

 

IXYL60N450 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXYL60N450
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 417 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 90 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 450 nS
   Coesⓘ - Output Capacitance, typ: 270 pF
   Qgⓘ - Total Gate Charge, typ: 366 nC
   Package: I5PAK

 IXYL60N450 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXYL60N450 Datasheet (PDF)

 ..1. Size:154K  ixys
 ixyl60n450.pdf

IXYL60N450 IXYL60N450

SAdvance Technical InformationHigh Voltage VCES = 4500VIXYL60N450XPTTM IGBT IC110 = 38A VCE(sat) 3.30V (Electrically Isolated Tab)ISOPLUS i5-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 4500 VVCGR TJ = 25C to 150C, RGE = 1M 4500 VVGES Continuous 20 VVGEM Transient 30

Datasheet: IXYH75N65C3H1 , IXYH80N90C3 , IXYJ30N120C3D1 , IXYK100N120B3 , IXYK100N65B3D1 , IXYK100N65C3D1 , IXYK120N120B3 , IXYK140N90C3 , JT075N065WED , IXYP10N65C3 , IXYP10N65C3D1 , IXYP10N65C3D1M , IXYP15N65C3 , IXYP15N65C3D1 , IXYP15N65C3D1M , IXGR72N60C3 , IXGT25N250HV .

 

 
Back to Top