IXYL60N450 PDF and Equivalents Search

 

IXYL60N450 PDF Specs and Replacement


   Type Designator: IXYL60N450
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 417 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 90 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
   tr ⓘ - Rise Time, typ: 450 nS
   Coesⓘ - Output Capacitance, typ: 270 pF
   Package: I5PAK
 

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IXYL60N450 PDF specs

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IXYL60N450

S Advance Technical Information High Voltage VCES = 4500V IXYL60N450 XPTTM IGBT IC110 = 38A VCE(sat) 3.30V (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 4500 V VCGR TJ = 25 C to 150 C, RGE = 1M 4500 V VGES Continuous 20 V VGEM Transient 30... See More ⇒

Specs: IXYH75N65C3H1 , IXYH80N90C3 , IXYJ30N120C3D1 , IXYK100N120B3 , IXYK100N65B3D1 , IXYK100N65C3D1 , IXYK120N120B3 , IXYK140N90C3 , IRGP4066D , IXYP10N65C3 , IXYP10N65C3D1 , IXYP10N65C3D1M , IXYP15N65C3 , IXYP15N65C3D1 , IXYP15N65C3D1M , IXGR72N60C3 , IXGT25N250HV .

History: IRG4PH50UD

Keywords - IXYL60N450 transistor spec

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