IXYL60N450 Datasheet and Replacement
Type Designator: IXYL60N450
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 417 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 90 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 450 nS
Coesⓘ - Output Capacitance, typ: 270 pF
Package: I5PAK
IXYL60N450 substitution
IXYL60N450 Datasheet (PDF)
ixyl60n450.pdf
SAdvance Technical InformationHigh Voltage VCES = 4500VIXYL60N450XPTTM IGBT IC110 = 38A VCE(sat) 3.30V (Electrically Isolated Tab)ISOPLUS i5-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 4500 VVCGR TJ = 25C to 150C, RGE = 1M 4500 VVGES Continuous 20 VVGEM Transient 30
Datasheet: IXYH75N65C3H1 , IXYH80N90C3 , IXYJ30N120C3D1 , IXYK100N120B3 , IXYK100N65B3D1 , IXYK100N65C3D1 , IXYK120N120B3 , IXYK140N90C3 , JT075N065WED , IXYP10N65C3 , IXYP10N65C3D1 , IXYP10N65C3D1M , IXYP15N65C3 , IXYP15N65C3D1 , IXYP15N65C3D1M , IXGR72N60C3 , IXGT25N250HV .
History: NCE75TD120BTP | DM2G50SH6A | MIXA30W1200TED | SGT10T60SDM1D | F3L100R07W2E3_B11 | CM150TX-24S1 | KGT25N135KDH
Keywords - IXYL60N450 transistor datasheet
IXYL60N450 cross reference
IXYL60N450 equivalent finder
IXYL60N450 lookup
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History: NCE75TD120BTP | DM2G50SH6A | MIXA30W1200TED | SGT10T60SDM1D | F3L100R07W2E3_B11 | CM150TX-24S1 | KGT25N135KDH
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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