IXYL60N450 Datasheet. Specs and Replacement

Type Designator: IXYL60N450  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 417 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 90 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃

tr ⓘ - Rise Time, typ: 450 nS

Coesⓘ - Output Capacitance, typ: 270 pF

Package: I5PAK

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IXYL60N450 datasheet

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IXYL60N450

S Advance Technical Information High Voltage VCES = 4500V IXYL60N450 XPTTM IGBT IC110 = 38A VCE(sat) 3.30V (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 4500 V VCGR TJ = 25 C to 150 C, RGE = 1M 4500 V VGES Continuous 20 V VGEM Transient 30... See More ⇒

Specs: IXYH75N65C3H1, IXYH80N90C3, IXYJ30N120C3D1, IXYK100N120B3, IXYK100N65B3D1, IXYK100N65C3D1, IXYK120N120B3, IXYK140N90C3, IRGP4066D, IXYP10N65C3, IXYP10N65C3D1, IXYP10N65C3D1M, IXYP15N65C3, IXYP15N65C3D1, IXYP15N65C3D1M, IXGR72N60C3, IXGT25N250HV

Keywords - IXYL60N450 transistor spec

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