All IGBT. IXXA30N65C3HV Datasheet

 

IXXA30N65C3HV Datasheet and Replacement


   Type Designator: IXXA30N65C3HV
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 230 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 52 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 33 nS
   Coesⓘ - Output Capacitance, typ: 133 pF
   Qg ⓘ - Total Gate Charge, typ: 37 nC
   Package: TO263
 

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IXXA30N65C3HV Datasheet (PDF)

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IXXA30N65C3HV

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXXA30N65C3HVGenX3TM IC110 = 30A VCE(sat) 2.2V tfi(typ) = 32nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-263Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 175C 650 VEVCGR TJ = 25C to 175C, RGE = 1M 650 V D (Tab)VGES Continuous 20 VVGEM Transie

Datasheet: IXYP10N65C3D1M , IXYP15N65C3 , IXYP15N65C3D1 , IXYP15N65C3D1M , IXGR72N60C3 , IXGT25N250HV , IXGT6N170AHV , IXGX50N60AU1S , GT30G122 , IXXR100N60B3H1 , IXXR110N60B4H1 , IXXR110N65B4H1 , IXYA15N65C3D1 , IXYA20N120C3HV , IXYA20N65B3 , IXYA20N65C3 , IXYA20N65C3D1 .

History: MGV12N120D

Keywords - IXXA30N65C3HV transistor datasheet

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