IXXA30N65C3HV PDF and Equivalents Search

 

IXXA30N65C3HV Specs and Replacement

Type Designator: IXXA30N65C3HV

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 230 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 52 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 33 nS

Coesⓘ - Output Capacitance, typ: 133 pF

Package: TO263

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IXXA30N65C3HV datasheet

 ..1. Size:209K  ixys
 ixxa30n65c3hv.pdf pdf_icon

IXXA30N65C3HV

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXXA30N65C3HV GenX3TM IC110 = 30A VCE(sat) 2.2V tfi(typ) = 32ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-263 Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 175 C 650 V E VCGR TJ = 25 C to 175 C, RGE = 1M 650 V D (Tab) VGES Continuous 20 V VGEM Transie... See More ⇒

Specs: IXYP10N65C3D1M , IXYP15N65C3 , IXYP15N65C3D1 , IXYP15N65C3D1M , IXGR72N60C3 , IXGT25N250HV , IXGT6N170AHV , IXGX50N60AU1S , IKW40T120 , IXXR100N60B3H1 , IXXR110N60B4H1 , IXXR110N65B4H1 , IXYA15N65C3D1 , IXYA20N120C3HV , IXYA20N65B3 , IXYA20N65C3 , IXYA20N65C3D1 .

History: IXYA50N65C3

Keywords - IXXA30N65C3HV transistor spec

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