IXYF40N450 Datasheet. Specs and Replacement

Type Designator: IXYF40N450  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 290 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.9 V @25℃

tr ⓘ - Rise Time, typ: 330 nS

Coesⓘ - Output Capacitance, typ: 146 pF

Package: I4PAK

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IXYF40N450 datasheet

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IXYF40N450

Advance Technical Information High Voltage XPTTM IGBT VCES = 4500V IXYF40N450 IC110 = 32A VCE(sat) 3.9V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 4500 V VCGR TJ = 25 C to 150 C, RGE = 1M 4500 V VGES Continuous 20 V 1 2 VGEM Transient 30 V Isolated Tab 5 IC25 TC = 25 C 60 A 1... See More ⇒

Specs: IXXR110N65B4H1, IXYA15N65C3D1, IXYA20N120C3HV, IXYA20N65B3, IXYA20N65C3, IXYA20N65C3D1, IXYA50N65C3, IXYF30N450, TGAN20N135FD, IXA20PT1200LB, IXA20RG1200DHGLB, IXA220I650NA, IXA30RG1200DHGLB, IXA40I4000KN, IXA40RG1200DHGLB, IXA70R1200NA, ISL9V3040P3

Keywords - IXYF40N450 transistor spec

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