All IGBT. IXYF40N450 Datasheet

 

IXYF40N450 Datasheet and Replacement


   Type Designator: IXYF40N450
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 290 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.9 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 330 nS
   Coesⓘ - Output Capacitance, typ: 146 pF
   Package: I4PAK
      - IGBT Cross-Reference

 

IXYF40N450 Datasheet (PDF)

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IXYF40N450

Advance Technical InformationHigh Voltage XPTTM IGBTVCES = 4500VIXYF40N450IC110 = 32AVCE(sat) 3.9V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 4500 VVCGR TJ = 25C to 150C, RGE = 1M 4500 VVGES Continuous 20 V12VGEM Transient 30 VIsolated Tab5IC25 TC = 25C 60 A1

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IXYH20N65C3 | 7MBP100VDA060-50 | CT20VS-8 | APT150GN60LDQ4G | STGBL6NC60DI | MMIX4B22N300 | MITB10WB1200TMH

Keywords - IXYF40N450 transistor datasheet

 IXYF40N450 cross reference
 IXYF40N450 equivalent finder
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