All IGBT. RGT00TS65D Datasheet

 

RGT00TS65D IGBT. Datasheet pdf. Equivalent


   Type Designator: RGT00TS65D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 277 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 85 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 68 nS
   Coesⓘ - Output Capacitance, typ: 106 pF
   Qgⓘ - Total Gate Charge, typ: 94 nC
   Package: TO247

 RGT00TS65D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RGT00TS65D Datasheet (PDF)

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 rgt00ts65d.pdf

RGT00TS65D RGT00TS65D

RGT00TS65D650V 50A Field Stop Trench IGBT DatasheetOutline TO-247NVCES650VIC(100C)50AVCE(sat) (Typ.)1.65VPD277W(1)(2)(3)Features Inner Circuit1) Low Collector - Emitter Saturation Voltage(2)(1) Gate2) Low Switching Loss(2) Collector*13) Short Circuit Withstand Time 5s(3) Emitter(1)4) Built in Very Fast & Soft Recovery FRD*1 Built in F

Datasheet: IXA20RG1200DHGLB , IXA220I650NA , IXA30RG1200DHGLB , IXA40I4000KN , IXA40RG1200DHGLB , IXA70R1200NA , ISL9V3040P3 , ISL9V3040S3 , IRG7S313U , RGT16NS65D , RGT30NS65D , RGT40NS65D , RGT40TS65D , RGT50TS65D , RGT60TS65D , RGT80TS65D , RGT8BM65D .

 

 
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