RGT00TS65D PDF and Equivalents Search

 

RGT00TS65D Specs and Replacement

Type Designator: RGT00TS65D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 277 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 85 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 68 nS

Coesⓘ - Output Capacitance, typ: 106 pF

Package: TO247

 RGT00TS65D Substitution

- IGBT ⓘ Cross-Reference Search

 

RGT00TS65D datasheet

 ..1. Size:1367K  rohm
 rgt00ts65d.pdf pdf_icon

RGT00TS65D

RGT00TS65D 650V 50A Field Stop Trench IGBT Datasheet Outline TO-247N VCES 650V IC(100 C) 50A VCE(sat) (Typ.) 1.65V PD 277W (1)(2)(3) Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5 s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in F... See More ⇒

Specs: IXA20RG1200DHGLB , IXA220I650NA , IXA30RG1200DHGLB , IXA40I4000KN , IXA40RG1200DHGLB , IXA70R1200NA , ISL9V3040P3 , ISL9V3040S3 , BT60T60ANFK , RGT16NS65D , RGT30NS65D , RGT40NS65D , RGT40TS65D , RGT50TS65D , RGT60TS65D , RGT80TS65D , RGT8BM65D .

History: IXA40I4000KN

Keywords - RGT00TS65D transistor spec

 RGT00TS65D cross reference
 RGT00TS65D equivalent finder
 RGT00TS65D lookup
 RGT00TS65D substitution
 RGT00TS65D replacement

 

 

 


 
↑ Back to Top
.