All IGBT. RGT30NS65D Datasheet

 

RGT30NS65D Datasheet and Replacement


   Type Designator: RGT30NS65D
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 66 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 35 pF
   Package: TO263
      - IGBT Cross-Reference

 

RGT30NS65D Datasheet (PDF)

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RGT30NS65D

RGT30NS65D 650V 15A Field Stop Trench IGBT Data SheetlOutline LPDS (TO-263S)VCES650V(2) IC(100C)15AVCE(sat) (Typ.)1.65V(1) (3) PD133WlFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2) (1) Gate 2) Low Switching Loss(2) Collector *1 3) Short Circuit Withstand Time 5s(3) Emitter (1) 4) Built in Very Fast & Soft Recovery FR

Datasheet: IXA30RG1200DHGLB , IXA40I4000KN , IXA40RG1200DHGLB , IXA70R1200NA , ISL9V3040P3 , ISL9V3040S3 , RGT00TS65D , RGT16NS65D , HGTG30N60A4 , RGT40NS65D , RGT40TS65D , RGT50TS65D , RGT60TS65D , RGT80TS65D , RGT8BM65D , RGT8NS65D , RGTH00TS65 .

History: MMG50SR120UZK | CM200E3U-24F | SIGC03T60E | CRG05T60A44S-G | FGHL40S65UQ | IXGA20N250 | 7MBR25SA120-01

Keywords - RGT30NS65D transistor datasheet

 RGT30NS65D cross reference
 RGT30NS65D equivalent finder
 RGT30NS65D lookup
 RGT30NS65D substitution
 RGT30NS65D replacement

 

 
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