RGT40NS65D Datasheet and Replacement
Type Designator: RGT40NS65D
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 70 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 27 nS
Coesⓘ - Output Capacitance, typ: 45 pF
Qgⓘ - Total Gate Charge, typ: 40 nC
Package: TO263
- IGBT Cross-Reference
RGT40NS65D Datasheet (PDF)
rgt40ns65d.pdf

RGT40NS65D 650V 20A Field Stop Trench IGBT Data SheetlOutline LPDS (TO-263S)VCES650V(2) IC(100C)20AVCE(sat) (Typ.)1.65V(1) (3) PD161WlFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2) (1) Gate 2) Low Switching Loss(2) Collector *1 3) Short Circuit Withstand Time 5s(3) Emitter (1) 4) Built in Very Fast & Soft Recovery FR
rgt40ts65d.pdf

RGT40TS65D 650V 20A Field Stop Trench IGBT Data SheetlOutline TO-247NVCES650VIC(100C)20AVCE(sat) (Typ.)1.65VPD144W(1)(2)(3) lFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2) (1) Gate 2) Low Switching Loss(2) Collector *1 3) Short Circuit Withstand Time 5s(3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD*1 Built i
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: JT030N065WED | JT040K065WED | XNG100B24TC1S5 | BT15T60A8F | IQGB300N120I4 | CM800HB-50H | 2MBI900VXA-120P-50
Keywords - RGT40NS65D transistor datasheet
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History: JT030N065WED | JT040K065WED | XNG100B24TC1S5 | BT15T60A8F | IQGB300N120I4 | CM800HB-50H | 2MBI900VXA-120P-50



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