RGT8BM65D Datasheet. Specs and Replacement

Type Designator: RGT8BM65D  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 31 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 4 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 36 nS

Coesⓘ - Output Capacitance, typ: 14 pF

Package: TO252

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RGT8BM65D datasheet

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RGT8BM65D

RGT8BM65D 650V 4A Field Stop Trench IGBT Data Sheet lOutline TO-252 VCES 650V (2) IC(100 C) 4A (1) VCE(sat) (Typ.) 1.65V (3) PD 62W lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5 s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built ... See More ⇒

Specs: RGT00TS65D, RGT16NS65D, RGT30NS65D, RGT40NS65D, RGT40TS65D, RGT50TS65D, RGT60TS65D, RGT80TS65D, BT60T60ANFK, RGT8NS65D, RGTH00TS65, RGTH00TS65D, RGTH40TS65, RGTH40TS65D, RGTH50TS65, RGTH50TS65D, RGTH60TS65

Keywords - RGT8BM65D transistor spec

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