RGTH00TS65 Datasheet and Replacement
Type Designator: RGTH00TS65
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 138 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 63 nS
Coesⓘ - Output Capacitance, typ: 106 pF
Package: TO247
RGTH00TS65 substitution
RGTH00TS65 Datasheet (PDF)
rgth00ts65.pdf

RGTH00TS65 650V 50A Field Stop Trench IGBT Data SheetlOutline TO-247NVCES650VIC(100C)50AVCE(sat) (Typ.)1.6VPD277W(1)(2)(3) lFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2) (1) Gate 2) High Speed Switching(2) Collector 3) Low Switching Loss & Soft Switching (1) (3) Emitter 4) Pb - free Lead Plating ; RoHS Compliant(3) lApplica
rgth00ts65d.pdf

RGTH00TS65D 650V 50A Field Stop Trench IGBT Data SheetlOutline TO-247NVCES650VIC(100C)50AVCE(sat) (Typ.)1.6VPD277W(1)(2)(3) lFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2) (1) Gate 2) High Speed Switching(2) Collector *1 3) Low Switching Loss & Soft Switching(3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD*1 Bui
Datasheet: RGT30NS65D , RGT40NS65D , RGT40TS65D , RGT50TS65D , RGT60TS65D , RGT80TS65D , RGT8BM65D , RGT8NS65D , NCE80TD65BT , RGTH00TS65D , RGTH40TS65 , RGTH40TS65D , RGTH50TS65 , RGTH50TS65D , RGTH60TS65 , RGTH60TS65D , RGTH80TS65 .
History: ISL9V3040P3
Keywords - RGTH00TS65 transistor datasheet
RGTH00TS65 cross reference
RGTH00TS65 equivalent finder
RGTH00TS65 lookup
RGTH00TS65 substitution
RGTH00TS65 replacement
History: ISL9V3040P3



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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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