All IGBT. RGTH00TS65 Datasheet

 

RGTH00TS65 IGBT. Datasheet pdf. Equivalent


   Type Designator: RGTH00TS65
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 138 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 63 nS
   Coesⓘ - Output Capacitance, typ: 106 pF
   Qgⓘ - Total Gate Charge, typ: 94 nC
   Package: TO247

 RGTH00TS65 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RGTH00TS65 Datasheet (PDF)

 ..1. Size:657K  rohm
 rgth00ts65.pdf

RGTH00TS65 RGTH00TS65

RGTH00TS65 650V 50A Field Stop Trench IGBT Data SheetlOutline TO-247NVCES650VIC(100C)50AVCE(sat) (Typ.)1.6VPD277W(1)(2)(3) lFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2) (1) Gate 2) High Speed Switching(2) Collector 3) Low Switching Loss & Soft Switching (1) (3) Emitter 4) Pb - free Lead Plating ; RoHS Compliant(3) lApplica

 0.1. Size:740K  rohm
 rgth00ts65d.pdf

RGTH00TS65 RGTH00TS65

RGTH00TS65D 650V 50A Field Stop Trench IGBT Data SheetlOutline TO-247NVCES650VIC(100C)50AVCE(sat) (Typ.)1.6VPD277W(1)(2)(3) lFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2) (1) Gate 2) High Speed Switching(2) Collector *1 3) Low Switching Loss & Soft Switching(3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD*1 Bui

Datasheet: RGT30NS65D , RGT40NS65D , RGT40TS65D , RGT50TS65D , RGT60TS65D , RGT80TS65D , RGT8BM65D , RGT8NS65D , FGW75N60HD , RGTH00TS65D , RGTH40TS65 , RGTH40TS65D , RGTH50TS65 , RGTH50TS65D , RGTH60TS65 , RGTH60TS65D , RGTH80TS65 .

 

 
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