All IGBT. HIA20N60BP Datasheet

 

HIA20N60BP Datasheet and Replacement


   Type Designator: HIA20N60BP
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 192 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.6 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 67 nS
   Coesⓘ - Output Capacitance, typ: 98 pF
   Qg ⓘ - Total Gate Charge, typ: 70 nC
   Package: TO247
 

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HIA20N60BP Datasheet (PDF)

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HIA20N60BP

Dec 2013VCES = 600 VIC = 20 AHIA20N60BP VCE(sat) typ = 2.2 V600V PT IGBTTO-247FEATURES Low VCE(sat) Maximum Junction Temperature 150 GCE Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behaviorAbsolute Maximum RatingsSymbol Parameter Value UnitsVCES Collector-

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HIA20N60BP

Aug. 2023HIA20N140IH-DA1400V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 1400 V Extremely low switching lossIC 20 A Excellent stability and uniformityVCE(sat) 1.50 V 1400V Breakdown voltageEoff 0.95 mJ Maximum Junction temperature, TJ(max)=175Package & Internal CircuitApplicationTO-247 SYMBOL

Datasheet: RGTH40TS65D , RGTH50TS65 , RGTH50TS65D , RGTH60TS65 , RGTH60TS65D , RGTH80TS65 , RGTH80TS65D , RJP4007ANS , MBQ60T65PES , HIA30N60BP , HIH20N60BP , HIH25N120TN , HIH30N120TF , HIH30N60BP , HIL40N120TF , HIL40N120VF , APT100GN120JDQ4 .

Keywords - HIA20N60BP transistor datasheet

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