HIA20N60BP PDF and Equivalents Search

 

HIA20N60BP Specs and Replacement

Type Designator: HIA20N60BP

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 192 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 67 nS

Coesⓘ - Output Capacitance, typ: 98 pF

Package: TO247

 HIA20N60BP Substitution

- IGBT ⓘ Cross-Reference Search

 

HIA20N60BP datasheet

 ..1. Size:664K  semihow
 hia20n60bp.pdf pdf_icon

HIA20N60BP

Dec 2013 VCES = 600 V IC = 20 A HIA20N60BP VCE(sat) typ = 2.2 V 600V PT IGBT TO-247 FEATURES Low VCE(sat) Maximum Junction Temperature 150 G C E Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behavior Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-... See More ⇒

 8.1. Size:474K  semihow
 hia20n140ih-da.pdf pdf_icon

HIA20N60BP

Aug. 2023 HIA20N140IH-DA 1400V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 1400 V Extremely low switching loss IC 20 A Excellent stability and uniformity VCE(sat) 1.50 V 1400V Breakdown voltage Eoff 0.95 mJ Maximum Junction temperature, TJ(max)=175 Package & Internal Circuit Application TO-247 SYMBOL ... See More ⇒

Specs: RGTH40TS65D , RGTH50TS65 , RGTH50TS65D , RGTH60TS65 , RGTH60TS65D , RGTH80TS65 , RGTH80TS65D , RJP4007ANS , FGH60N60SMD , HIA30N60BP , HIH20N60BP , HIH25N120TN , HIH30N120TF , HIH30N60BP , HIL40N120TF , HIL40N120VF , APT100GN120JDQ4 .

History: RGTH80TS65D

Keywords - HIA20N60BP transistor spec

 HIA20N60BP cross reference
 HIA20N60BP equivalent finder
 HIA20N60BP lookup
 HIA20N60BP substitution
 HIA20N60BP replacement

 

 

 


 
↑ Back to Top
.