All IGBT. HIH20N60BP Datasheet

 

HIH20N60BP Datasheet and Replacement


   Type Designator: HIH20N60BP
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 192 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.6 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 67 nS
   Coesⓘ - Output Capacitance, typ: 98 pF
   Qg ⓘ - Total Gate Charge, typ: 70 nC
   Package: TO3P
 

 HIH20N60BP substitution

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HIH20N60BP Datasheet (PDF)

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HIH20N60BP

Dec 2013VCES = 600 VIC = 20 AHIH20N60BP VCE(sat) typ = 2.2 V600V PT IGBTTO-3PFEATURES Low VCE(sat)G Maximum Junction Temperature 150 CE Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behaviorAbsolute Maximum RatingsSymbol Parameter Value UnitsVCES Collector-E

Datasheet: RGTH50TS65D , RGTH60TS65 , RGTH60TS65D , RGTH80TS65 , RGTH80TS65D , RJP4007ANS , HIA20N60BP , HIA30N60BP , FGPF4536 , HIH25N120TN , HIH30N120TF , HIH30N60BP , HIL40N120TF , HIL40N120VF , APT100GN120JDQ4 , APT100GT60JR , APT12GT60KRG .

History: MMG150S120B6UC

Keywords - HIH20N60BP transistor datasheet

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