HIH20N60BP Specs and Replacement
Type Designator: HIH20N60BP
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 192 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
tr ⓘ - Rise Time, typ: 67 nS
Coesⓘ - Output Capacitance, typ: 98 pF
Package: TO3P
HIH20N60BP Substitution - IGBT ⓘ Cross-Reference Search
HIH20N60BP datasheet
hih20n60bp.pdf
Dec 2013 VCES = 600 V IC = 20 A HIH20N60BP VCE(sat) typ = 2.2 V 600V PT IGBT TO-3P FEATURES Low VCE(sat) G Maximum Junction Temperature 150 C E Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behavior Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-E... See More ⇒
Specs: RGTH50TS65D , RGTH60TS65 , RGTH60TS65D , RGTH80TS65 , RGTH80TS65D , RJP4007ANS , HIA20N60BP , HIA30N60BP , FGD4536 , HIH25N120TN , HIH30N120TF , HIH30N60BP , HIL40N120TF , HIL40N120VF , APT100GN120JDQ4 , APT100GT60JR , APT12GT60KRG .
Keywords - HIH20N60BP transistor spec
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