All IGBT. HIH20N60BP Datasheet

 

HIH20N60BP IGBT. Datasheet pdf. Equivalent


   Type Designator: HIH20N60BP
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 192 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 67 nS
   Coesⓘ - Output Capacitance, typ: 98 pF
   Qgⓘ - Total Gate Charge, typ: 70 nC
   Package: TO3P

 HIH20N60BP Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HIH20N60BP Datasheet (PDF)

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 hih20n60bp.pdf

HIH20N60BP HIH20N60BP

Dec 2013VCES = 600 VIC = 20 AHIH20N60BP VCE(sat) typ = 2.2 V600V PT IGBTTO-3PFEATURES Low VCE(sat)G Maximum Junction Temperature 150 CE Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behaviorAbsolute Maximum RatingsSymbol Parameter Value UnitsVCES Collector-E

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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