HIH25N120TN Specs and Replacement
Type Designator: HIH25N120TN
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 312 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
tr ⓘ - Rise Time, typ: 65 nS
Coesⓘ - Output Capacitance, typ: 105 pF
Package: TO3P
HIH25N120TN Substitution - IGBT ⓘ Cross-Reference Search
HIH25N120TN datasheet
hih25n120tn.pdf
Dec 2013 VCES = 1200 V IC = 25 A HIH25N120TN VCE(sat) typ = 1.9 V 1200V NPT Trench IGBT TO-3P FEATURES 1200V NPT Trench Technology G High Speed Switching C E Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-Emitter Voltage 1200 V Collector Current Continuous (TC = ... See More ⇒
Specs: RGTH60TS65 , RGTH60TS65D , RGTH80TS65 , RGTH80TS65D , RJP4007ANS , HIA20N60BP , HIA30N60BP , HIH20N60BP , FGPF4536 , HIH30N120TF , HIH30N60BP , HIL40N120TF , HIL40N120VF , APT100GN120JDQ4 , APT100GT60JR , APT12GT60KRG , APT13GP120BDQ1G .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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