HIH25N120TN Datasheet. Specs and Replacement

Type Designator: HIH25N120TN  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 312 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 65 nS

Coesⓘ - Output Capacitance, typ: 105 pF

Package: TO3P

  📄📄 Copy 

 HIH25N120TN Substitution

- IGBTⓘ Cross-Reference Search

 

HIH25N120TN datasheet

 ..1. Size:870K  semihow
 hih25n120tn.pdf pdf_icon

HIH25N120TN

Dec 2013 VCES = 1200 V IC = 25 A HIH25N120TN VCE(sat) typ = 1.9 V 1200V NPT Trench IGBT TO-3P FEATURES 1200V NPT Trench Technology G High Speed Switching C E Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-Emitter Voltage 1200 V Collector Current Continuous (TC = ... See More ⇒

Specs: RGTH60TS65, RGTH60TS65D, RGTH80TS65, RGTH80TS65D, RJP4007ANS, HIA20N60BP, HIA30N60BP, HIH20N60BP, IXGH60N60, HIH30N120TF, HIH30N60BP, HIL40N120TF, HIL40N120VF, APT100GN120JDQ4, APT100GT60JR, APT12GT60KRG, APT13GP120BDQ1G

Keywords - HIH25N120TN transistor spec

 HIH25N120TN cross reference
 HIH25N120TN equivalent finder
 HIH25N120TN lookup
 HIH25N120TN substitution
 HIH25N120TN replacement