All IGBT. HIH25N120TN Datasheet

 

HIH25N120TN IGBT. Datasheet pdf. Equivalent


   Type Designator: HIH25N120TN
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 312 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 65 nS
   Coesⓘ - Output Capacitance, typ: 105 pF
   Qgⓘ - Total Gate Charge, typ: 230 nC
   Package: TO3P

 HIH25N120TN Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HIH25N120TN Datasheet (PDF)

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 hih25n120tn.pdf

HIH25N120TN HIH25N120TN

Dec 2013VCES = 1200 VIC = 25 AHIH25N120TN VCE(sat) typ = 1.9 V1200V NPT Trench IGBTTO-3PFEATURES 1200V NPT Trench TechnologyG High Speed SwitchingCE Low Conduction Loss Positive Temperature Coefficient Easy Parallel OperationAbsolute Maximum Ratings Symbol Parameter Value UnitsVCES Collector-Emitter Voltage 1200 VCollector Current Continuous (TC =

Datasheet: RGTH60TS65 , RGTH60TS65D , RGTH80TS65 , RGTH80TS65D , RJP4007ANS , HIA20N60BP , HIA30N60BP , HIH20N60BP , RJP30H2A , HIH30N120TF , HIH30N60BP , HIL40N120TF , HIL40N120VF , APT100GN120JDQ4 , APT100GT60JR , APT12GT60KRG , APT13GP120BDQ1G .

 

 
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