All IGBT. HIL40N120TF Datasheet

 

HIL40N120TF Datasheet and Replacement


   Type Designator: HIL40N120TF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 480 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 80 nS
   Coesⓘ - Output Capacitance, typ: 150 pF
   Qg ⓘ - Total Gate Charge, typ: 320 nC
   Package: TO264
 

 HIL40N120TF substitution

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HIL40N120TF Datasheet (PDF)

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HIL40N120TF

Dec 2013VCES = 1200 VIC = 40 AHIL40N120TF VCE(sat) typ = 2.0 V1200V Field Stop Trench IGBTTO-264FEATURES 1200V Field Stop Trench Technology High Speed SwitchingG C E Low Conduction Loss Positive Temperature Coefficient Easy Parallel OperationAbsolute Maximum RatingsSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 1200 VCollector Current Conti

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HIL40N120TF

Jan 2014VCES = 1200 VIC = 40 AHIL40N120VF VCE(sat) typ = 2.0 V1200V Field Stop Trench IGBTTO-264Employing Field Stop technology, CO-PAK, IGBT with FRD.1200V/40A planar gate IGBTs provide low Conduction,switching losses and very good ruggedness. ApplicationsG C EInduction Heating, UPS, welding convertersand general purpose inverters. Absolute Maximum RatingsSymbol P

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: APT33GF120BR

Keywords - HIL40N120TF transistor datasheet

 HIL40N120TF cross reference
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