HIL40N120TF PDF and Equivalents Search

 

HIL40N120TF Specs and Replacement

Type Designator: HIL40N120TF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 480 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 80 nS

Coesⓘ - Output Capacitance, typ: 150 pF

Package: TO264

 HIL40N120TF Substitution

- IGBT ⓘ Cross-Reference Search

 

HIL40N120TF datasheet

 ..1. Size:909K  semihow
 hil40n120tf.pdf pdf_icon

HIL40N120TF

Dec 2013 VCES = 1200 V IC = 40 A HIL40N120TF VCE(sat) typ = 2.0 V 1200V Field Stop Trench IGBT TO-264 FEATURES 1200V Field Stop Trench Technology High Speed Switching G C E Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-Emitter Voltage 1200 V Collector Current Conti... See More ⇒

 5.1. Size:851K  semihow
 hil40n120vf.pdf pdf_icon

HIL40N120TF

Jan 2014 VCES = 1200 V IC = 40 A HIL40N120VF VCE(sat) typ = 2.0 V 1200V Field Stop Trench IGBT TO-264 Employing Field Stop technology, CO-PAK, IGBT with FRD. 1200V/40A planar gate IGBTs provide low Conduction, switching losses and very good ruggedness. Applications G C E Induction Heating, UPS, welding converters and general purpose inverters. Absolute Maximum Ratings Symbol P... See More ⇒

Specs: RGTH80TS65D , RJP4007ANS , HIA20N60BP , HIA30N60BP , HIH20N60BP , HIH25N120TN , HIH30N120TF , HIH30N60BP , RJP30H2A , HIL40N120VF , APT100GN120JDQ4 , APT100GT60JR , APT12GT60KRG , APT13GP120BDQ1G , APT150GN120JDQ4 , APT150GT120JR , APT15GN120KG .

Keywords - HIL40N120TF transistor spec

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