ART20U120 Datasheet and Replacement
Type Designator: ART20U120
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 27 nS
Coesⓘ - Output Capacitance, typ: 630 pF
Qg ⓘ - Total Gate Charge, typ: 54 nC
Package: TO247AC
ART20U120 substitution
ART20U120 Datasheet (PDF)
art20u120.pdf
ART20U120 INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control Low conduction losses VCES=1200 V High switching speed VCE(on) typ. =3,8 V Tighter parameter distribution @VGE =15V, Ic=20A N-channel ABSOLUTE MAXIMUM RATINGS Parameter Symbol Units MaxCollector-to-Emitter Voltage VCES V 1200Continuous Collector Curr
Datasheet: APT65GP60B2G , APT65GP60JDQ2 , APT75GN120JDQ3 , APT75GN60BDQ2G , APT75GN60LDQ3G , APT75GN60SDQ2G , APT75GT120JRDQ3 , ART10U120 , CRG40T60AK3HD , ART30U120 , ART40U120 , ART45U120SPEC , AUIRGDC0250 , SKM100GAL12T4 , SKM100GB12T4 , SKM100GB12T4G , SKM100GB12V .
History: IXYH40N65B3
Keywords - ART20U120 transistor datasheet
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History: IXYH40N65B3
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