All IGBT. SKM100GB12V Datasheet

 

SKM100GB12V Datasheet and Replacement


   Type Designator: SKM100GB12V
   Type: IGBT
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 159 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 38 nS
   Coesⓘ - Output Capacitance, typ: 590 pF
   Package: MODULE
      - IGBT Cross-Reference

 

SKM100GB12V Datasheet (PDF)

 ..1. Size:253K  semikron
 skm100gb12v.pdf pdf_icon

SKM100GB12V

SKM100GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 159 ATj = 175 CTc =80C 121 AICnom 100 AICRM ICRM = 3xICnom 300 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 2tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 121 ATj = 175 CSKM100GB12VTc =80C 91 AIFnom 1

 4.1. Size:541K  semikron
 skm100gb124d.pdf pdf_icon

SKM100GB12V

 4.2. Size:398K  semikron
 skm100gb12t4g.pdf pdf_icon

SKM100GB12V

SKM100GB12T4GAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 154 ATj = 175 CTc =80C 118 AICnom 100 AICRM ICRM = 3xICnom 300 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 118 ATj = 175 CSKM100GB12T4GTc =80

 4.3. Size:554K  semikron
 skm100gb123d.pdf pdf_icon

SKM100GB12V

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History: BT25T120CKR | SMBH1G100US120 | IXXA50N60B3 | NGTB15N120IHR | 7MBR50VP120-50 | APT44GA60SD30C | FD400R33KF2C

Keywords - SKM100GB12V transistor datasheet

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 SKM100GB12V equivalent finder
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