SKM100GB12V Spec and Replacement, IGBT Equivalent Finder, Cross Reference

SKM100GB12V Specs and Replacement

Type Designator: SKM100GB12V

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 159 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃

tr ⓘ - Rise Time, typ: 38 nS

Coesⓘ - Output Capacitance, typ: 590 pF

Package: MODULE

SKM100GB12V Substitution

- IGBT ⓘ Cross-Reference Search

SKM100GB12V datasheet

..1. Size:253K semikron
skm100gb12v.pdf pdf_icon

SKM100GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 159 A Tj = 175 C Tc =80 C 121 A ICnom 100 A ICRM ICRM = 3xICnom 300 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 2 tpsc VGE 20 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 121 A Tj = 175 C SKM100GB12V Tc =80 C 91 A IFnom 1... See More ⇒

4.1. Size:541K semikron
skm100gb124d.pdf pdf_icon

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4.2. Size:398K semikron
skm100gb12t4g.pdf pdf_icon

SKM100GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 154 A Tj = 175 C Tc =80 C 118 A ICnom 100 A ICRM ICRM = 3xICnom 300 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 118 A Tj = 175 C SKM100GB12T4G Tc =80 ... See More ⇒

4.3. Size:554K semikron
skm100gb123d.pdf pdf_icon