SKM100GB176D Specs and Replacement
Type Designator: SKM100GB176D
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 125 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 40 nS
Coesⓘ - Output Capacitance, typ: 280 pF
Package: MODULE SKM100GB176D Substitution - IGBT ⓘ Cross-Reference Search
SKM100GB176D datasheet
skm100gb12v.pdf
SKM100GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 159 A Tj = 175 C Tc =80 C 121 A ICnom 100 A ICRM ICRM = 3xICnom 300 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 2 tpsc VGE 20 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 121 A Tj = 175 C SKM100GB12V Tc =80 C 91 A IFnom 1... See More ⇒
Specs: ART30U120 , ART40U120 , ART45U120SPEC , AUIRGDC0250 , SKM100GAL12T4 , SKM100GB12T4 , SKM100GB12T4G , SKM100GB12V , CRG75T60AK3HD , SKM145GAL176D , SKM145GB066D , SKM145GB176D , SKM150GAL12T4 , SKM150GAL12V , SKM150GAR12T4 , SKM150GB12T4 , SKM150GB12T4G .
Keywords - SKM100GB176D transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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