HGTM12N50E1 Datasheet. Specs and Replacement
Type Designator: HGTM12N50E1 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 75 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 12 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃
Package: TO3
📄📄 Copy
HGTM12N50E1 Substitution
- IGBTⓘ Cross-Reference Search
HGTM12N50E1 datasheet
hgth12n40c1 hgth12n40e1 hgth12n50c1 hgth12n50e1 hgtm12n40c1 hgtm12n40e1 hgtm12n50c1 hgtm12n50e1 hgtp10n40c1 hgtp10n40e1 hgtp10n50c1 hgtp10n50e1.pdf
... See More ⇒
Specs: HGTP10N40F1D, HGTP10N50C1, HGTP10N50C1D, HGTP10N50E1, HGTP10N50E1D, HGTP10N50F1D, HGTP11N120CN, HGTM12N50C1, RJP30E2DPP-M0, HGTP12N60A4, HGTP12N60A4D, HGTP12N60B3, HGTP12N60B3D, HGTP12N60C3, HGTP12N60C3D, HGTP12N60D1, HGTP14N36G3VL
Keywords - HGTM12N50E1 transistor spec
HGTM12N50E1 cross reference
HGTM12N50E1 equivalent finder
HGTM12N50E1 lookup
HGTM12N50E1 substitution
HGTM12N50E1 replacement
History: HGTP12N60A4
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
Popular searches
2n3403 | 2sa750 | tip117 | 2n3643 | 2sc2078 transistor equivalent | 2sc2073 | a608 transistor | c536 transistor