HGTM12N50E1 Datasheet and Replacement
Type Designator: HGTM12N50E1
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 75 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 12 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 50 nS
Package: TO3
- IGBT Cross-Reference
HGTM12N50E1 Datasheet (PDF)
..1. Size:333K 1
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Datasheet: HGTP10N40F1D , HGTP10N50C1 , HGTP10N50C1D , HGTP10N50E1 , HGTP10N50E1D , HGTP10N50F1D , HGTP11N120CN , HGTM12N50C1 , BT40T60ANF , HGTP12N60A4 , HGTP12N60A4D , HGTP12N60B3 , HGTP12N60B3D , HGTP12N60C3 , HGTP12N60C3D , HGTP12N60D1 , HGTP14N36G3VL .
History: AP50G60SW
Keywords - HGTM12N50E1 transistor datasheet
HGTM12N50E1 cross reference
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HGTM12N50E1 lookup
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HGTM12N50E1 replacement
History: AP50G60SW
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