All IGBT. HGTP12N40E1 Datasheet

 

HGTP12N40E1 IGBT. Datasheet pdf. Equivalent

Type Designator: HGTP12N40E1

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 75

Maximum Collector-Emitter Voltage |Vce|, V: 400

Collector-Emitter saturation Voltage |Vcesat|, V: 4.5

Maximum Collector Current |Ic|, A: 12

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 50

Package: TO220

HGTP12N40E1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTP12N40E1 Datasheet (PDF)

7.1. hgtp12n60c3d hgt1s12n60c3d.pdf Size:151K _fairchild_semi

HGTP12N40E1
HGTP12N40E1

HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes • 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices • Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar • Short Circuit Rating transistors. The

7.2. hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4d.pdf Size:173K _fairchild_semi

HGTP12N40E1
HGTP12N40E1

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode • >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A The HGTG12N60A4D, HGTP12N60A4D and • 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A HGT1S12N60A4DS are MOS gated high voltage switching •

 7.3. hgtg12n60a4 hgtp12n60a4 hgt1s12n60a4.pdf Size:207K _fairchild_semi

HGTP12N40E1
HGTP12N40E1

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and • >100kHz Operation at 390V, 12A HGT1S12N60A4S9A are MOS gated high voltage switching • 200kHz Operation at 390V, 9A devices combining the best features of MOSFETs and • 600V Switching SOA Capability bipolar transistors. These devices ha

7.4. hgtp12n60c3 hgt1s12n60c3.pdf Size:169K _fairchild_semi

HGTP12N40E1
HGTP12N40E1

HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated • 24A, 600V at TC = 25oC high voltage switching devices combining the best features • 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the • Typical Fall Time. . . . . . . . . . . . . . . . 230ns a

 7.5. hgtp12n60c3.pdf Size:188K _harris_semi

HGTP12N40E1
HGTP12N40E1

HGTP12N60C3, HGT1S12N60C3, S E M I C O N D U C T O R HGT1S12N60C3S August 1995 24A, 600V, UFS Series N-Channel IGBT Features Packages JEDEC TO-220AB EMITTER • 24A, 600V at TC = +25oC COLLECTOR GATE • 600V Switching SOA Capability • Typical Fall Time - 230ns at TJ = +150oC COLLECTOR (FLANGE) • Short Circuit Rating • Low Conduction Loss JEDEC TO-262AA Description EMITTER

7.6. hgtp12n6.pdf Size:40K _harris_semi

HGTP12N40E1
HGTP12N40E1

S E M I C O N D U C T O R HGTP12N60D1 12A, 600V N-Channel IGBT April 1995 Features Package JEDEC TO-220AB • 12A, 600V EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time <500ns GATE • High Input Impedance COLLECTOR • Low Conduction Loss (FLANGE) Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipola

Datasheet: HGTP10N40F1D , HGTP10N50C1 , HGTP10N50C1D , HGTP10N50E1 , HGTP10N50E1D , HGTP10N50F1D , HGTP11N120CN , HGTP12N40C1 , HGTG30N60A4 , HGTP12N60A4 , HGTP12N60A4D , HGTP12N60B3 , HGTP12N60B3D , HGTP12N60C3 , HGTP12N60C3D , HGTP12N60D1 , HGTP14N36G3VL .

 

 
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