Справочник IGBT. HGTP12N40E1

 

HGTP12N40E1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: HGTP12N40E1

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 75W

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 400V

Напряжение насыщения коллектор-эмиттер (Ucesat): 4.5V

Максимальный постоянный ток коллектора (Ic): 12A

Максимальная температура перехода (Tj): 175

Время нарастания: 50

Корпус: TO220

Аналог (замена) для HGTP12N40E1

 

 

HGTP12N40E1 Datasheet (PDF)

3.1. hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4d.pdf Size:173K _fairchild_semi

HGTP12N40E1
HGTP12N40E1

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A The HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A HGT1S12N60A4DS are MOS gated high voltage switching 600V Swit

3.2. hgtg12n60a4 hgtp12n60a4 hgt1s12n60a4.pdf Size:207K _fairchild_semi

HGTP12N40E1
HGTP12N40E1

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12A HGT1S12N60A4S9A are MOS gated high voltage switching 200kHz Operation at 390V, 9A devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These devices have the hi

 3.3. hgtp12n60c3 hgt1s12n60c3.pdf Size:169K _fairchild_semi

HGTP12N40E1
HGTP12N40E1

HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated 24A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ = 15

3.4. hgtp12n60c3d hgt1s12n60c3d.pdf Size:151K _fairchild_semi

HGTP12N40E1
HGTP12N40E1

HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar Short Circuit Rating transistors. The device ha

 3.5. hgtp12n6.pdf Size:40K _harris_semi

HGTP12N40E1
HGTP12N40E1

S E M I C O N D U C T O R HGTP12N60D1 12A, 600V N-Channel IGBT April 1995 Features Package JEDEC TO-220AB 12A, 600V EMITTER Latch Free Operation COLLECTOR Typical Fall Time <500ns GATE High Input Impedance COLLECTOR Low Conduction Loss (FLANGE) Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar Terminal D

3.6. hgtp12n60c3.pdf Size:188K _harris_semi

HGTP12N40E1
HGTP12N40E1

HGTP12N60C3, HGT1S12N60C3, S E M I C O N D U C T O R HGT1S12N60C3S August 1995 24A, 600V, UFS Series N-Channel IGBT Features Packages JEDEC TO-220AB EMITTER 24A, 600V at TC = +25oC COLLECTOR GATE 600V Switching SOA Capability Typical Fall Time - 230ns at TJ = +150oC COLLECTOR (FLANGE) Short Circuit Rating Low Conduction Loss JEDEC TO-262AA Description EMITTER COLLECTOR

Другие IGBT... HGTP10N40F1D , HGTP10N50C1 , HGTP10N50C1D , HGTP10N50E1 , HGTP10N50E1D , HGTP10N50F1D , HGTP11N120CN , HGTP12N40C1 , HGTG30N60A4 , HGTP12N60A4 , HGTP12N60A4D , HGTP12N60B3 , HGTP12N60B3D , HGTP12N60C3 , HGTP12N60C3D , HGTP12N60D1 , HGTP14N36G3VL .

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Список транзисторов

Обновления

IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |