All IGBT. SSM28G45EM Datasheet

 

SSM28G45EM Datasheet and Replacement


   Type Designator: SSM28G45EM
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 2.5 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 450 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
   |Ic| ⓘ - Maximum Collector Current: 130(PULSE) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 100 nS
   Coesⓘ - Output Capacitance, typ: 220 pF
   Package: SO8
 

 SSM28G45EM substitution

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SSM28G45EM Datasheet (PDF)

 ..1. Size:242K  silicon standard
 ssm28g45em.pdf pdf_icon

SSM28G45EM

SSM28G45EMN-CHANNEL INSULATED-GATE BIPOLAR TRANSISTORHigh input impedance VCE 450VCHigh peak current capability ICP 130ACCC3.3V gate driveCGGEESO-8EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter Voltage 450 VVGEGate-Emitter Voltage 6 VVGEPPulsed Gate-Emitter Voltage 8 VICPPulsed Collector Current 130 APD @ T

Datasheet: SPM1001 , SPM1002 , SPM1003 , SPM1004 , SPM1005 , SPM1006 , SSM20G45EGH , SSM20G45EGJ , XNF15N60T , STGP35HF60W , T0160NB45A , T1500TB25E , SKM75GAR063D , SKM75GB12T4 , SKM75GB12V , SKM75GB176D , SKM800GA126D .

History: AOD6B65MQ1E

Keywords - SSM28G45EM transistor datasheet

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