SSM28G45EM Datasheet and Replacement

   Type Designator: SSM28G45EM
   Type: IGBT + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 2.5 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 450 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
   |Ic|ⓘ - Maximum Collector Current: 130(PULSE) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 1 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 100 nS
   Coesⓘ - Output Capacitance, typ: 220 pF
   Qgⓘ - Total Gate Charge, typ: 74 nC
   Package: SO8
      - IGBT Cross-Reference