SSM28G45EM PDF and Equivalents Search

 

SSM28G45EM Specs and Replacement

Type Designator: SSM28G45EM

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 2.5 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 450 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V

|Ic| ⓘ - Maximum Collector Current: 130(PULSE) A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.8 V @25℃

tr ⓘ - Rise Time, typ: 100 nS

Coesⓘ - Output Capacitance, typ: 220 pF

Package: SO8

 SSM28G45EM Substitution

- IGBT ⓘ Cross-Reference Search

 

SSM28G45EM datasheet

 ..1. Size:242K  silicon standard
 ssm28g45em.pdf pdf_icon

SSM28G45EM

SSM28G45EM N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR High input impedance VCE 450V C High peak current capability ICP 130A C C C 3.3V gate drive C G G E E SO-8 E E Absolute Maximum Ratings Symbol Parameter Rating Units VCE Collector-Emitter Voltage 450 V VGE Gate-Emitter Voltage 6 V VGEP Pulsed Gate-Emitter Voltage 8 V ICP Pulsed Collector Current 130 A PD @ T... See More ⇒

Specs: SPM1001 , SPM1002 , SPM1003 , SPM1004 , SPM1005 , SPM1006 , SSM20G45EGH , SSM20G45EGJ , CRG75T65AK5HD , STGP35HF60W , T0160NB45A , T1500TB25E , SKM75GAR063D , SKM75GB12T4 , SKM75GB12V , SKM75GB176D , SKM800GA126D .

History: NGTB35N65FL2WG | TA49047

Keywords - SSM28G45EM transistor spec

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