T0160NB45A Specs and Replacement
Type Designator: T0160NB45A
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 1470 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 160 A @25℃
Tj ⓘ - Maximum Junction Temperature: 125 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.4 V @25℃
Package: MODULE T0160NB45A Substitution - IGBT ⓘ Cross-Reference Search
T0160NB45A datasheet
t0160nb45a.pdf
Date - 15 Feb, 2013 Data Sheet Issue - 1 Insulated Gate Bi-Polar Transistor Type T0160NB45A Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS LIMITS IC(DC) DC collector current, IGBT 160 ... See More ⇒
t0160.pdf
UTC T0160 TRIAC HIGH PERFORMANCE PNPN DEVICE FEATURES *High performance PNPN device diffused with TAG s proprietary Top GlassTM Process. *It is Intended for general purpose applications where logic compatible gate sensitivity is required. 1 TO-92 1 MT1 2 G 3 MT2 ABSOLUTE MAXIMUM RATINGS ( Ta=25 C ,unless otherwise specified ) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT ... See More ⇒
Specs: SPM1003 , SPM1004 , SPM1005 , SPM1006 , SSM20G45EGH , SSM20G45EGJ , SSM28G45EM , STGP35HF60W , IKW40N65WR5 , T1500TB25E , SKM75GAR063D , SKM75GB12T4 , SKM75GB12V , SKM75GB176D , SKM800GA126D , SKM800GA176D , SKM900GA12E4 .
Keywords - T0160NB45A transistor spec
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