All IGBT. T0160NB45A Datasheet

 

T0160NB45A Datasheet and Replacement


   Type Designator: T0160NB45A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1470 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 160 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.2 V
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   Qgⓘ - Total Gate Charge, typ: 4000 nC
   Package: MODULE
      - IGBT Cross-Reference

 

T0160NB45A Datasheet (PDF)

 ..1. Size:434K  ixys
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T0160NB45A

Date:- 15 Feb, 2013 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type T0160NB45A Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS LIMITS IC(DC) DC collector current, IGBT 160

 9.1. Size:15K  utc
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T0160NB45A

UTC T0160 TRIACHIGH PERFORMANCE PNPNDEVICEFEATURES*High performance PNPN device diffused with TAGs proprietary Top GlassTM Process.*It is Intended for general purpose applications where logic compatible gate sensitivity is required.1TO-92 1:MT1 2:G 3:MT2ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified )PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: DIM100PHM33-F | DIM1000XSM33-TL001

Keywords - T0160NB45A transistor datasheet

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