T0160NB45A Datasheet and Replacement
Type Designator: T0160NB45A
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 1470 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 160 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.4 V @25℃
Tj ⓘ - Maximum Junction Temperature: 125 ℃
Package: MODULE
T0160NB45A substitution
T0160NB45A Datasheet (PDF)
t0160nb45a.pdf
Date:- 15 Feb, 2013 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type T0160NB45A Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS LIMITS IC(DC) DC collector current, IGBT 160
t0160.pdf
UTC T0160 TRIACHIGH PERFORMANCE PNPNDEVICEFEATURES*High performance PNPN device diffused with TAGs proprietary Top GlassTM Process.*It is Intended for general purpose applications where logic compatible gate sensitivity is required.1TO-92 1:MT1 2:G 3:MT2ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified )PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Datasheet: SPM1003 , SPM1004 , SPM1005 , SPM1006 , SSM20G45EGH , SSM20G45EGJ , SSM28G45EM , STGP35HF60W , IKW40N65WR5 , T1500TB25E , SKM75GAR063D , SKM75GB12T4 , SKM75GB12V , SKM75GB176D , SKM800GA126D , SKM800GA176D , SKM900GA12E4 .
History: VS-GB90DA60U | 2MBI300VH-120-50
Keywords - T0160NB45A transistor datasheet
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History: VS-GB90DA60U | 2MBI300VH-120-50
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