All IGBT. T1500TB25E Datasheet

 

T1500TB25E Datasheet and Replacement


   Type Designator: T1500TB25E
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 7800 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 1500 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.3 V
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   Qgⓘ - Total Gate Charge, typ: 10000 nC
   Package: MODULE
      - IGBT Cross-Reference

 

T1500TB25E Datasheet (PDF)

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T1500TB25E

Date:- 18 Feb, 2014 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type T1500TB25E Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. 1250 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS LIMITS IC(DC) DC collector current, IGBT 1500

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: DIM100PHM33-F | DIM1000XSM33-TL001

Keywords - T1500TB25E transistor datasheet

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