T1500TB25E Specs and Replacement
Type Designator: T1500TB25E
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 7800 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 1500 A @25℃
Tj ⓘ - Maximum Junction Temperature: 125 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9 V @25℃
Package: MODULE T1500TB25E Substitution - IGBT ⓘ Cross-Reference Search
T1500TB25E datasheet
t1500tb25e.pdf
Date - 18 Feb, 2014 Data Sheet Issue - 1 Insulated Gate Bi-Polar Transistor Type T1500TB25E Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. 1250 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS LIMITS IC(DC) DC collector current, IGBT 1500... See More ⇒
Specs: SPM1004 , SPM1005 , SPM1006 , SSM20G45EGH , SSM20G45EGJ , SSM28G45EM , STGP35HF60W , T0160NB45A , GT30F125 , SKM75GAR063D , SKM75GB12T4 , SKM75GB12V , SKM75GB176D , SKM800GA126D , SKM800GA176D , SKM900GA12E4 , VS-100MT060WDF .
Keywords - T1500TB25E transistor spec
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